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KHB9D0N50P1 Datasheet(数据表) 3 Page - KEC(Korea Electronics)

部件型号  KHB9D0N50P1
说明  N CHANNEL MOS FIELD EFFECT TRANSISTOR
下载  7 Pages
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制造商  KEC [KEC(Korea Electronics)]
网页  http://www.keccorp.com
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KHB9D0N50P1 Datasheet(HTML) 3 Page - KEC(Korea Electronics)

   
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2006. 1. 17
3/7
KHB9D0N50P1/F1
Revision No : 0
Gate - Source Voltage VGS (V)
ID - VDS
Drain - Source Voltage VDS (V)
Drain Current ID (A)
10
-1
10
0
10
1
10
-1
10
0
10
1
10
0
10
1
10
-1
68
410
2
ID - VGS
RDS(ON) - ID
RDS(ON) - Tj
IS - VSD
0.2
0.4
0.8
1.0
1.2
1.4
0.6
0
0
2.0
1.0
0.5
1.5
05
10
25
20
15
50
-100
-50
100
150
VGS = 20V
VGS = 10V
Source - Drain Voltage VSD (V)
0.0
0.5
3.0
2.5
1.0
1.5
2.0
Junction Temperature Tj ( )
C
25 C
150 C
V
GS = 10V
I
DS = 4.5A
10
0
10
-1
10
1
VGS
TOP : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
BVDSS - Tj
0.8
1.2
1.0
0.9
1.1
-100
100
0150
-50
50
Junction Temperature Tj (
)
V
GS = 0V
I
DS = 250µA
C
150 C
25 C
-55 C




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