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KHB9D0N50P1 Datasheet(数据表) 2 Page - KEC(Korea Electronics)

部件型号  KHB9D0N50P1
说明  N CHANNEL MOS FIELD EFFECT TRANSISTOR
下载  7 Pages
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制造商  KEC [KEC(Korea Electronics)]
网页  http://www.keccorp.com
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KHB9D0N50P1 Datasheet(HTML) 2 Page - KEC(Korea Electronics)

   
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2006. 1. 17
2/7
KHB9D0N50P1/F1
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BVDSS
ID=250 A, VGS=0V
500
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS/ Tj ID=250 A, Referenced to 25
-
0.57
-
V/
Drain Cut-off Current
IDSS
VDS=500V, VGS=0V,
-
-
10
A
Gate Threshold Voltage
Vth
VDS=VGS, ID=250 A
2.0
-
4.0
V
Gate Leakage Current
IGSS
VGS= 30V, VDS=0V
-
-
100
nA
Drain-Source ON Resistance
RDS(ON)
VGS=10V, ID=4.5A
-
0.65
0.8
Dynamic
Total Gate Charge
Qg
VDS=400V, ID=9A
VGS=10V
(Note4,5)
-
34.6
40
nC
Gate-Source Charge
Qgs
-
5.9
-
Gate-Drain Charge
Qgd
-
15.5
-
Turn-on Delay time
td(on)
VDD=200V
RL=22
RG=25
(Note4,5)
-
23
45
ns
Turn-on Rise time
tr
-
65
140
Turn-off Delay time
td(off)
-
148
241
Turn-off Fall time
tf
-
81
140
Input Capacitance
Ciss
VDS=25V, VGS=0V, f=1.0MHz
-
1389
1805
pF
Reverse Transfer Capacitance
Crss
-
19.2
24.9
Output Capacitance
Coss
-
155.7
202
Source-Drain Diode Ratings
Continuous Source Current
IS
VGS<Vth
-
-
9
A
Pulsed Source Current
ISP
-
-
36
Diode Forward Voltage
VSD
IS=9A, VGS=0V
-
-
1.5
V
Reverse Recovery Time
trr
IS=9A, VGS=0V,
dIs/dt=100A/ s
-
357
-
ns
Reverse Recovery Charge
Qrr
-
4.87
-
C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 8mH, IS=9A, VDD=50V, RG = 25 , Starting Tj = 25 .
Note 3) IS
9A, dI/dt 200A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width
300 , Duty Cycle
2%.
Note 5) Essentially independent of operating temperature.




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