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GWM120-0075P3 数据表(PDF) 2 Page - IXYS Corporation

部件名 GWM120-0075P3
功能描述  Three phase full bridge with Trench MOSFETs in DCB isolated high current package
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

GWM120-0075P3 数据表(HTML) 2 Page - IXYS Corporation

  GWM120-0075P3 Datasheet HTML 1Page - IXYS Corporation GWM120-0075P3 Datasheet HTML 2Page - IXYS Corporation GWM120-0075P3 Datasheet HTML 3Page - IXYS Corporation  
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© 2006 IXYS All rights reserved
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GWM 120-0075P3
IXYS reserves the right to change limits, test conditions and dimensions.
Dimensions in mm (1 mm = 0.0394")
Component
Symbol
Conditions
Maximum Ratings
I
RMS
per pin in main current paths (L+, L-, L
1, L2, L3)
300
A
may be additionally limited by external connections
T
VJ
-40...+175
°C
T
stg
-55...+125
°C
V
ISOL
I
ISOL ≤ 1 mA; 50/60 Hz; t = 1 min
1000
V~
F
C
Mounting force with clip
50 - 250
N
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
R
pin to chip
0.6
m
C
P
coupling capacity between shorted
160
pF
pins and mounting tab in the case
Weight
typ.
25
g
Equivalent Circuits for Simulation
Thermal Response
junction - case (typ.)
C
th1 = 0.039 J/K; Rth1 = 0.28 K/W
C
th2 = 0.069 J/K; Rth2 = 0.57 K/W
S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1
L3
L2
L1
L-
L+


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