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KM62U256DLRGI-10L 数据表(PDF) 2 Page - Samsung semiconductor |
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KM62U256DLRGI-10L 数据表(HTML) 2 Page - Samsung semiconductor |
2 / 9 page KM62V256D, KM62U256D Family CMOS SRAM Revision 1.0 November 1997 2 32Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The KM62V256D and KM62U256D families are fabricated by SAMSUNG ′s advanced CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. FEATURES • Process Technology : TFT • Organization : 32Kx8 • Power Supply Voltage KM62V256D family : 2.7~3.3V KM62U256D family : 3.0~3.6V • Low Data Retention Voltage : 2V(Min) • Three state output and TTL Compatible • Package Type : 28-SOP-450 28-TSOP1-0813.4F/R PRODUCT FAMILY 1. The parameter is measured with 30pF test load. 2. KM62V256D Family support SOP package without 100ns speed bin. Product Family Operating Temperature VCC Range Speed (ns) Power Dissipation PKG Type Standby (ISB1, Max) Operating (Icc2) KM62V256DL-L Commercial(0~70 °C) 3.0V ~3.6V 701)/100 5 µA 35mA 28-SOP2) 28-TSOP1-F/R KM62U256DL-L 2.7V ~ 3.3V 701)/85/100 KM62V256DLE-L Extended(-25~85 °C) 3.0V ~3.6V 701)/100 KM62U256DLE-L 2.7V ~ 3.3V 701)/85/100 KM62V256DLI-L Industrial(-40~85 °C) 3.0V ~3.6V 701)/100 KM62U256DLI-L 2.7V ~ 3.3V 701)/85/100 SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. PIN DESCRIPTION Pin Name Function Pin Name Function CS Chip Select Input I/O1~I/O8 Data Inputs/Outputs OE Output Enable Input Vcc Power WE Write Enable Input Vss Ground A0~A14 Address Inputs NC No connect FUNCTIONAL BLOCK DIAGRAM A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS VCC WE A13 A8 A9 A11 OE A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 28-SOP 15 16 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 A11 A9 A8 A13 WE VCC A3 A14 A12 A7 A6 A5 A4 A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 28-TSOP Type1 - Forward 1 2 3 4 5 6 7 8 9 10 11 12 13 14 27 26 28 25 24 23 22 21 20 19 18 17 16 15 OE 28-TSOP A11 A9 A8 A13 WE VCC A3 A14 A12 A7 A6 A5 A4 A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 27 26 28 25 24 23 22 21 20 19 18 17 16 15 OE Type1 - Reverse Precharge circuit. Memory array 256 rows 128 ×8 columns I/O Circuit Column select Clk gen. Row select A10 A3 A0 A1 A2 A11 A9 A13 A8 A12 A14 A4 A5 A7 CS WE I/O1 Data cont Data cont OE I/O8 A6 Control logic |
类似零件编号 - KM62U256DLRGI-10L |
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类似说明 - KM62U256DLRGI-10L |
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