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IS62LV12816BLL Datasheet(数据表) 3 Page - Integrated Silicon Solution, Inc

部件型号  IS62LV12816BLL
说明  128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
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制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc

IS62LV12816BLL Datasheet(HTML) 3 Page - Integrated Silicon Solution, Inc

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IS62LV12816BLL
ISSI®
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. B
03/07/01
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DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = –1 mA
2.0
V
VOL
Output LOW Voltage
VCC = Min., IOL = 2.1 mA
0.4
V
VIH
Input HIGH Voltage
2.2
VCC + 0.2
V
VIL(1)
Input LOW Voltage
–0.2
0.4
V
ILI
Input Leakage
GND
≤ VIN ≤ VCC
–11
µA
ILO
Output Leakage
GND
≤ VOUT ≤ VCC, Outputs Disabled
–11
µA
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
VTERM
Terminal Voltage with Respect to GND
–0.5 to Vcc+0.5
V
TBIAS
Temperature Under Bias
–40 to +85
°C
VCC
Vcc Related to GND
–0.3 to +3.6
V
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
OPERATING RANGE
Range
Ambient Temperature
VCC
Commercial
0°C to +70°C
2.7V - 3.45V
Industrial
–40°C to +85°C
2.7V - 3.45V
CAPACITANCE(1)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Input/Output Capacitance
VOUT = 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.




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