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IS62LV12816BLL Datasheet(数据表) 1 Page - Integrated Silicon Solution, Inc

部件型号  IS62LV12816BLL
说明  128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
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制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc

IS62LV12816BLL Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. B
03/07/01
IS62LV12816BLL
ISSI®
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
128K x 16 LOW VOLTAGE, ULTRA
LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 55, 70, 100 ns
• CMOS low power operation
– 120 mW (typical) operating
– 6 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 2.7V-3.45V VCC power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP (Type II) and
48-pin mini BGA (6mm x 8mm)
DESCRIPTION
The
ISSI IS62LV12816BLL is a high-speed, 2,097,152-bit
static RAM organized as 131,072 words by 16 bits. It is
fabricated using
ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-performance
and low power consumption devices.
When
CE is HIGH (deselected) or when CE is low and
both
LB and UB are HIGH, the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE and OE. The active LOW
Write Enable (
WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (
UB) and Lower
Byte (
LB) access.
The IS62LV12816BLL is packaged in the JEDEC standard
44-pin TSOP (Type II) and 48-pin mini BGA (6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
FEBRUARY 2001
A0-A16
CE
OE
WE
128K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB




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