SMBJ12AON datasheet(4/6 Pages) ONSEMI | 600 Watt Peak Power Zener Transient Voltage Suppressor

部件名	SMBJ12AON

功能描述	600 Watt Peak Power Zener Transient Voltage Suppressor

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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4 / 6 page

SMBJ12AON

http://onsemi.com

4

APPLICATION NOTES

RESPONSE TIME

In most applications, the transient suppressor device is

placed in parallel with the equipment or component to be

protected. In this situation, there is a time delay associated

with the capacitance of the device and an overshoot

condition associated with the inductance of the device and

the inductance of the connection method. The capacitive

effect is of minor importance in the parallel protection

scheme because it only produces a time delay in the

transition from the operating voltage to the clamp voltage as

shown in Figure 5.

The inductive effects in the device are due to actual

turn-on time (time required for the device to go from zero

current to full current) and lead inductance. This inductive

effect produces an overshoot in the voltage across the

equipment or component being protected as shown in

Figure 6. Minimizing this overshoot is very important in the

application, since the main purpose for adding a transient

suppressor is to clamp voltage spikes. The SMB series have

a very good response time, typically < 1 ns and negligible

inductance. However, external inductive effects could

produce unacceptable overshoot. Proper circuit layout,

minimum lead lengths and placing the suppressor device as

close as possible to the equipment or components to be

protected will minimize this overshoot.

Some input impedance represented by Zin is essential to

prevent overstress of the protection device. This impedance

should be as high as possible, without restricting the circuit

operation.

DUTY CYCLE DERATING

If the duty cycle increases, the peak power must be

reduced as indicated by the curves of Figure 7. Average

power must be derated as the lead or ambient temperature

rises above 25

°C. The average power derating curve

normally given on data sheets may be normalized and used

for this purpose.

VL

V

Vin

Vin (TRANSIENT)

VL

td

V

Vin (TRANSIENT)

OVERSHOOT DUE TO

INDUCTIVE EFFECTS

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

t

Figure 5.

Figure 6.

Figure 7. Typical Derating Factor for Duty Cycle

1 ms

10

ms

1

0.7

0.5

0.3

0.05

0.1

0.2

0.01

0.02

0.03

0.07

100

ms

0.1 0.2

0.5

2

5

10

50

1

20

100

D, DUTY CYCLE (%)

PULSE WIDTH

10 ms

类似零件编号 - SMBJ12AON

制造商	部件名	数据表	功能描述
Jinan Gude Electronic D...	SMBJ12A	301Kb / 4P	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Jiangsu High diode Semi...	SMBJ12A	1Mb / 7P	SMB Plastic-Encapsulate Diodes
Socay Electornics Co., ...	SMBJ12A	620Kb / 7P	Surface Mount Transient Voltage Suppressors (TVS)
Littelfuse	SMBJ12A	144Kb / 5P	Transient Voltage Suppression Diodes
PACELEADER INDUSTRIAL	SMBJ12A	342Kb / 5P	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

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类似说明 - SMBJ12AON

制造商	部件名	数据表	功能描述
ON Semiconductor	NS6A13AT3G	104Kb / 4P	600 Watt Peak Power Zener Transient Voltage Suppressor November, 2008 ??Rev. 1
Littelfuse	NSB12ANT3G	233Kb / 6P	600 Watt Peak Power Zener Transient Voltage Suppressor
ON Semiconductor	NSB13ANT3G	90Kb / 6P	600 Watt Peak Power Zener Transient Voltage Suppressor December, 2007 - Rev. 0
ON Semiconductor	NS6A12AT3G	103Kb / 4P	600 Watt Peak Power Zener Transient Voltage Suppressor August, 2014 ??Rev. 0
Littelfuse	NS6A12AT3G	229Kb / 4P	600 Watt Peak Power Zener Transient Voltage Suppressor
ON Semiconductor	NSB12ANT3G	90Kb / 6P	600 Watt Peak Power Zener Transient Voltage Suppressor December, 2007 - Rev. 0
Littelfuse	NS6A13AT3G	239Kb / 4P	600 Watt Peak Power Zener Transient Voltage Suppressor
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ON Semiconductor	NSA5.0AT3G	107Kb / 4P	400 Watt Peak Power Zener Transient Voltage Suppressor October, 2008 ??Rev. 1