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NTGD3133P 数据表(PDF) 2 Page - ON Semiconductor |
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NTGD3133P 数据表(HTML) 2 Page - ON Semiconductor |
2 / 5 page NTGD3133P http://onsemi.com 2 THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 3) RqJA 115 °C/W Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA 95 Junction−to−Ambient – Steady State Min Pad (Note 4) RqJA 225 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size. MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V ID = −250 mA −20 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ − 14.4 − mV/ °C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −16 V TJ = 25°C − − −1.0 mA TJ = 85°C − − −10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±12 V − − 100 nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VGS = VDS ID = −250 mA −0.6 −0.9 −1.4 V Drain−to−Source On Resistance RDS(on) VGS = −4.5 V, ID = −1.9 A − 95 145 m W VGS = −2.5 V, ID = −1.6 A − 150 200 Forward Transconductance gFS VDS = −5.0 V, ID = −2.5 A − 4.0 − S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS VGS = 0 V, VDS = −10 V, f = 1.0 MHz − 390 − pF Output Capacitance COSS − 75 − Reverse Transfer Capacitance CRSS − 37 − Total Gate Charge QG(TOT) VGS = −4.5 V, VDS = −10 V, ID = −2.2 A − 3.7 5.5 nC Threshold Gate Charge QG(TH) − 0.7 − Gate−to−Source Charge QGS − 1.1 − Gate−to−Drain Charge QGD − 1.2 − SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time td(ON) VGS = −4.5 V, VDD = −10 V, ID = −1.0 A, RG = 6.0 W − 6.7 − ns Rise Time tr − 12.7 − Turn−Off Delay Time td(OFF) − 13.2 − Fall Time tf − 11 − DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C IS = −0.8 A − −0.8 −1.2 V Reverse Recovery Time tRR VGS = 0 V, dISD / dt = 100 A/ms, IS = −1.0 A − 7.4 − ns Charge Time ta − 4.8 − Discharge Time tb − 2.6 − Reverse Recovery Charge QRR − 2.4 − nC 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. |
类似零件编号 - NTGD3133P |
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类似说明 - NTGD3133P |
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