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NTGD3133P 数据表(PDF) 2 Page - ON Semiconductor

部件名 NTGD3133P
功能描述  Power MOSFET ??0 V, ??.5 A, P?묬hannel, TSOP?? Dual
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

NTGD3133P 数据表(HTML) 2 Page - ON Semiconductor

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NTGD3133P
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 3)
RqJA
115
°C/W
Junction−to−Ambient – t
≤ 5 s (Note 3)
RqJA
95
Junction−to−Ambient – Steady State Min Pad (Note 4)
RqJA
225
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size.
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V
ID = −250 mA
−20
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
14.4
mV/
°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = −16 V
TJ = 25°C
−1.0
mA
TJ = 85°C
−10
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±12 V
100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(TH)
VGS = VDS
ID = −250 mA
−0.6
−0.9
−1.4
V
Drain−to−Source On Resistance
RDS(on)
VGS = −4.5 V, ID = −1.9 A
95
145
m
W
VGS = −2.5 V, ID = −1.6 A
150
200
Forward Transconductance
gFS
VDS = −5.0 V, ID = −2.5 A
4.0
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, VDS = −10 V, f = 1.0 MHz
390
pF
Output Capacitance
COSS
75
Reverse Transfer Capacitance
CRSS
37
Total Gate Charge
QG(TOT)
VGS = −4.5 V, VDS = −10 V, ID = −2.2 A
3.7
5.5
nC
Threshold Gate Charge
QG(TH)
0.7
Gate−to−Source Charge
QGS
1.1
Gate−to−Drain Charge
QGD
1.2
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(ON)
VGS = −4.5 V, VDD = −10 V,
ID = −1.0 A, RG = 6.0 W
6.7
ns
Rise Time
tr
12.7
Turn−Off Delay Time
td(OFF)
13.2
Fall Time
tf
11
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, TJ = 25°C
IS = −0.8 A
−0.8
−1.2
V
Reverse Recovery Time
tRR
VGS = 0 V,
dISD / dt = 100 A/ms, IS = −1.0 A
7.4
ns
Charge Time
ta
4.8
Discharge Time
tb
2.6
Reverse Recovery Charge
QRR
2.4
nC
5. Pulse Test: pulse width
v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.


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