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SS14T3 数据表(PDF) 1 Page - ON Semiconductor

部件名 SS14T3
功能描述  12 V, 6.0 A, Low VCE(sat) PNP Transistor
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

SS14T3 数据表(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 0
1
Publication Order Number:
NSS12600CF8/D
NSS12600CF8T1G
12 V, 6.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−12
Vdc
Collector-Base Voltage
VCBO
−12
Vdc
Emitter-Base Voltage
VEBO
−7.0
Vdc
Collector Current − Continuous
IC
−5.0
Adc
Collector Current − Peak
ICM
−6.0
A
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD (Note 1)
830
6.7
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
150
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD (Note 2)
1.4
11.1
W
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
90
°C/W
Thermal Resistance,
Junction−to−Lead #1
RqJL (Note 2)
15
°C/W
Total Device Dissipation
(Single Pulse < 10 sec)
PDsingle
(Notes 2 & 3)
2.75
W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm2, 1 oz copper traces.
2. FR−4 @ 500 mm2, 1 oz copper traces.
3. Thermal response.
COLLECTOR
1, 2, 3, 6, 7, 8
4
BASE
5
EMITTER
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ChipFET]
CASE 1206A
STYLE 4
MARKING DIAGRAM
C
C
C
B
C
C
C
E
PIN
CONNECTIONS
5
6
7
81
2
3
4
VE = Specific Device Code
M = Date Code
G = Pb−Free Package
NSS12600CF8T1G
ChipFET
(Pb−Free)
3000/
Tape & Reel
−12 VOLTS, 6.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 45 mW
VE M
G


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