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NILMS4501N Datasheet(数据表) 3 Page - ON Semiconductor

部件型号  NILMS4501N
说明  Power MOSFET with Current Mirror FET
下载  9 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
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NILMS4501N Datasheet(HTML) 3 Page - ON Semiconductor

   
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NILMS4501N
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3
MAIN MOSFET ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
(VDS = 6.0 V, VGS = 0 V, f = 1.0 MHz)
Ciss
1380
1500
pF
Output Capacitance
Coss
870
1000
Transfer Capacitance
Crss
275
350
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
(VDD = 6.0 V, ID = 2.0 A,
VGS = 4.5 V, RG = 2.5 W)
td(on)
12
14
ns
Rise Time
tr
15
18
Turn−Off Delay Time
td(off)
17
20
Fall Time
tf
6.0
8.0
Turn−On Delay Time
(VDD = 6.0 V, ID = 2.0 A,
VGS = 10 V, RG = 2.5 W)
td(on)
8.5
11
ns
Rise Time
tr
15
20
Turn−Off Delay Time
td(off)
22.5
27
Fall Time
tf
6.5
9.0
Gate Charge
(VDS = 6.0 V, ID = 2.0 A, VGS = 4.5 V)
QT
11
14
nC
QG(th)
1.7
2.5
Qgs
3.5
4.5
Qgd
3.6
4.3
Gate Charge
(VDS = 6.0 V, ID = 2.0 A, VGS = 10 V)
QT
23.5
25
nC
QG(th)
4.4
5.5
Qgs
5.6
10
Qgd
2.5
7.0
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(Notes 5 & 6)
(IS = 6.0 A, VGS = 0 V)
(IS = 6.0 A, VGS = 0 V, TJ = 175°C)
VSD
0.80
0.57
1.1
V
Reverse Recovery Time
(Note 6)
(IS = 3.0 A, VGS = 0 V, dIS/dt = 100 A/ms)
trr
42
55
ns
ta
19.5
25
tb
22.5
30
Reverse Recovery Stored
Charge (Note 6)
QRR
0.042
0.06
mC
5. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.




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