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DIM600NSM45-F000 数据表(PDF) 3 Page - Dynex Semiconductor

部件名 DIM600NSM45-F000
功能描述  Single Switch IGBT Module
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制造商  DYNEX [Dynex Semiconductor]
网页  http://www.dynexsemi.com
标志 DYNEX - Dynex Semiconductor

DIM600NSM45-F000 数据表(HTML) 3 Page - Dynex Semiconductor

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DIM600NSM45-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
3/8
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
T case = 25°C unless stated otherwise.
Symbo
l
Parameter
Test Conditions
Min
Typ
Max
Units
ICES
Collector cut-off current
VGE =0V,VCE =VCES
1
mA
VGE =0V,VCE =VCES ,Tcase =125 °C
60
mA
IGES
Gate leakage current
VGE = 20V,VCE =0V
8
uA
VGE(TH)
Gate threshold voltage
IC =80mA,VGE =VCE
5.5
6.5
7.0
V
VCE(sat)
Collector-emitter saturation
voltage
VGE =15V,IC =600A
2.9
V
VGE =15V,IC =600A,TVJ =125 °C
3.5
V
IF
Diode forward current
DC
600
A
IFM
Diode maximum forward
current
tp =1ms
1200
A
VF
Diode forward voltage
IF =600A
3.0
V
IF =600A,TVJ =125 °C
3.1
V
Cies
Input capacitance
VCE =25V,VGE =0V,f =1MHz
132
nF
Cres
Reverse transfer capacitance
VCE =25V,VGE =0V,f =1MHz
1.8
nF
LM
Module inductance
15
nH
RINT
Internal transistor resistance
135
µ
SCData
Short circuit.I SC
Tj
≤125 °C,V CC ≤3000V,
I 1
2800
A
t p =10 us,
I 2
VCE(max) = VCES – L*.di/dt
IEC 60747-9
2500
A
Note:
Measured at the power busbars and not the auxiliary terminals
*L is the circuit inductance + L M


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