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DIM600NSM45-F000 数据表(PDF) 3 Page - Dynex Semiconductor |
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DIM600NSM45-F000 数据表(HTML) 3 Page - Dynex Semiconductor |
3 / 8 page DIM600NSM45-F000 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/8 www.dynexsemi.com ELECTRICAL CHARACTERISTICS T case = 25°C unless stated otherwise. Symbo l Parameter Test Conditions Min Typ Max Units ICES Collector cut-off current VGE =0V,VCE =VCES 1 mA VGE =0V,VCE =VCES ,Tcase =125 °C 60 mA IGES Gate leakage current VGE = 20V,VCE =0V 8 uA VGE(TH) Gate threshold voltage IC =80mA,VGE =VCE 5.5 6.5 7.0 V VCE(sat) † Collector-emitter saturation voltage VGE =15V,IC =600A 2.9 V VGE =15V,IC =600A,TVJ =125 °C 3.5 V IF Diode forward current DC 600 A IFM Diode maximum forward current tp =1ms 1200 A VF Diode forward voltage IF =600A 3.0 V IF =600A,TVJ =125 °C 3.1 V Cies Input capacitance VCE =25V,VGE =0V,f =1MHz 132 nF Cres Reverse transfer capacitance VCE =25V,VGE =0V,f =1MHz 1.8 nF LM Module inductance 15 nH RINT Internal transistor resistance 135 µ Ω SCData Short circuit.I SC Tj ≤125 °C,V CC ≤3000V, I 1 2800 A t p =10 us, I 2 VCE(max) = VCES – L*.di/dt IEC 60747-9 2500 A Note: † Measured at the power busbars and not the auxiliary terminals *L is the circuit inductance + L M |
类似零件编号 - DIM600NSM45-F000 |
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类似说明 - DIM600NSM45-F000 |
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