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EMF5XV6T5 Datasheet(数据表) 2 Page - ON Semiconductor

部件型号  EMF5XV6T5
说明  Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
下载  6 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
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EMF5XV6T5 Datasheet(HTML) 2 Page - ON Semiconductor

   
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EMF5XV6T5
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
Typ
Max
Unit
Q1
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
100
nAdc
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
0.1
mAdc
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
hFE
80
140
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
VOL
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
Vdc
Input Resistor
R1
32.9
47
61.1
k
W
Resistor Ratio
R1/R2
0.8
1.0
1.2
Q2
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−12
Vdc
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
−15
Vdc
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
−6.0
Vdc
Collector Cutoff Current
(VCB = −15 Vdc, IE = 0)
ICBO
−0.1
mAdc
Emitter Cutoff Current
(VEB = −6.0 Vdc)
IEBO
−0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = −10 mA, VCE = −2.0 V)
hFE
270
680
Collector −Emitter Saturation Voltage (Note 4)
(IC = −200 mA, IB = −10 mA)
VCE(sat)
−250
mV
Base −Emitter Saturation Voltage (Note 4)
(IC = −150 mA, IB = −20 mA)
VBE(sat)
−0.81
−0.90
V
Base −Emitter Turn−on Voltage (Note 4)
(IC = −150 mA, VCE = −3.0 V)
VBE(on)
−0.81
−0.875
V
Input Capacitance
(VEB = 0 V, f = 1.0 MHz)
Cibo
52
pF
Output Capacitance
(VCB = 0 V, f = 1.0 MHz)
Cobo
30
pF
Turn−On Time
(IBI = −50 mA, IC = −500 mA, RL = 3.0 W)
ton
50
ns
Turn−Off Time
(IB1 = IB2 = −50 mA, IC = −500 mA, RL = 3.0 W)
toff
80
ns
3. Pulse Test: Pulse Width < 300
ms, Duty Cycle < 2.0%.
4. Pulsed Condition: Pulse Width = 300
msec, Duty Cycle ≤ 2%.
Figure 1. Derating Curve
300
200
150
100
50
0
−50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
RqJA = 833°C/W
250




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