STB200NF04L datasheet(2/12 Pages) STMICROELECTRONICS

部件名	STB200NF04L

功能描述	N-CHANNEL 40V - 3 m ohm - 120 A TO-220/D2PAK/I2PAK STripFET II MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP200NF04L - STB200NF04L - STB200NF04L-1

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Table 3: Absolute Maximum ratings

(1)ISD ≤ 100 A, di/dt ≤ 240 A/µs, VDD ≤ 32 , Tj ≤ TJMAX

(2) Pulse width limited by safe operating area.

(3) Starting Tj = 25°C, IAR = 50A, VDD = 30V

(**) Current limited by Package

Table 4: Thermal Data

(*)When mounted on 1 inch² FR4 2oZ Cu

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: On/Off

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

40

V

VGDR

Drain-gate Voltage (RGS=20 KΩ)

40

V

VGS

Gate- source Voltage

± 16

V

ID (**)

Drain Current (continuous) at TC = 25°C

120

A

ID

Drain Current (continuous) at TC = 100°C

120

A

IDM (2)

Drain Current (pulsed)

480

A

PTOT

Total Dissipation at TC = 25°C

300

W

Derating Factor

2

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

3.6

V/ns

EAS (3)

Single Pulse Avalanche Energy

1.4

J

Tstg

Storage Temperature

-55 to 175

°C

Tj

Max. Operating Junction Temperature

TO-220/I²PAK

D²PAK

Unit

Rthj-case

Thermal Resistance Junction-case

Max

0.50

°C/W

Rthj-pcb (*)

Thermal Resistance Junction-pcb

Max

35

°C/W

Rthja

Thermal Resistance Junction-ambient

Max

62.5

--

Tl

Maximum Lead Temperature For Soldering Purpose

300

--

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

40

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS= Max Rating

VD = Max Rating, TC= 125 °C

1

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16V

±100

nA

VGS(th)

Gate Threshold Voltage VDS = VGS, ID = 250µA

1

4V

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V, ID = 50 A

VGS = 5 V, ID = 50 A

TO-220

I²PAK

3.3

3.8

4.6

m

Ω

m

Ω

VGS = 10 V, ID = 50 A

VGS = 5 V, ID = 50 A

D²PAK

3.0

3.5

4.3

m

Ω

m

Ω

类似零件编号 - STB200NF04L

制造商	部件名	数据表	功能描述
STMicroelectronics	STB200NF04	404Kb / 15P	N-CHANNEL 40V - 120 A - 3.3 mOHM TO-220/D2PAK/I2PAK STripFETII MOSFET
	STB200NF04-1	404Kb / 15P	N-CHANNEL 40V - 120 A - 3.3 mOHM TO-220/D2PAK/I2PAK STripFETII MOSFET
	STB200NF04T4	404Kb / 15P	N-CHANNEL 40V - 120 A - 3.3 mOHM TO-220/D2PAK/I2PAK STripFETII MOSFET
VBsemi Electronics Co.,...	STB200NF04T4	1Mb / 9P	N-Channel 40 V (D-S) MOSFET

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