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IRF6643TRPBF Datasheet(数据表) 1 Page - International Rectifier

部件型号  IRF6643TRPBF
说明  DirectFET Power MOSFET - Typical value (unless otherwise specified)
下载  9 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
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 1 page
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www.irf.com
1
11/28/06
DirectFET
™ Power MOSFET ‚
PD - 97112A
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.43mH, RG = 25Ω, IAS = 7.6A.
Notes:
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
IRF6643TRPbF
l RoHS Compliant

l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

0
10203040
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VDS= 120V
VDS= 75V
VDS= 30V
ID= 7.6A
4
6
8
10
12
14
16
VGS, Gate-to-Source Voltage (V)
20
30
40
50
60
70
TJ = 25°C
TJ = 125°C
ID = 7.6A
SH
SJ
SP
MZ
MN
Description
The IRF6643PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6643PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for 48V and 36V-60V input
voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency
and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-
DC converters.
DirectFET
™ ISOMETRIC
MZ
VDSS
VGS
RDS(on)
150V max ±20V max
29m
Ω@ 10V
Qg tot
Qgd
Vgs(th)
39nC
11nC
4.0V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
50
Max.
5.0
35
76
±20
150
6.2
7.6




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