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IRF6643TRPBF Datasheet(数据表) 2 Page - International Rectifier

部件型号  IRF6643TRPBF
说明  DirectFET Power MOSFET - Typical value (unless otherwise specified)
下载  9 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 

   
 2 page
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IRF6643TRPbF
2
www.irf.com
S
D
G
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Electrical Characteristic @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
150
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.18
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
29
34.5
m
VGS(th)
Gate Threshold Voltage
3.0
4.0
4.9
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-11
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
16
–––
–––
S
Qg
Total Gate Charge
–––
39
55
Qgs1
Pre-Vth Gate-to-Source Charge
–––
9.6
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
2.2
–––
nC
Qgd
Gate-to-Drain Charge
–––
11
17
Qgodr
Gate Charge Overdrive
–––
16
–––
See Fig. 15
Qsw
Switch Charge (Qgs2 + Qgd)
–––
13
–––
Qoss
Output Charge
–––
14
–––
nC
RG
Gate Resistance
–––
0.8
–––
td(on)
Turn-On Delay Time
–––
9.2
–––
tr
Rise Time
–––
5.0
–––
td(off)
Turn-Off Delay Time
–––
13
–––
ns
tf
Fall Time
–––
4.4
–––
Ciss
Input Capacitance
–––
2340
–––
Coss
Output Capacitance
–––
300
–––
pF
Crss
Reverse Transfer Capacitance
–––
61
–––
Coss
Output Capacitance
–––
1950
–––
Coss
Output Capacitance
–––
140
–––
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
IS
Continuous Source Current
–––
–––
58
(Body Diode) TJ= 25°C
A
ISM
Pulsed Source Current
–––
–––
76
(Body Diode)
g
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
67
100
ns
Qrr
Reverse Recovery Charge
–––
190
280
nC
MOSFET symbol
Clamped Inductive Load
VDS = 25V
Conditions
VGS = 0V, VDS = 80V, f=1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VDS = 16V, VGS = 0V
VDD = 75V, VGS = 10V
i
VGS = 0V
ƒ = 1.0MHz
ID = 7.6A
VDS = VGS, ID = 150µA
VDS = 150V, VGS = 0V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 7.6A
i
TJ = 25°C, IF = 7.6A, VDD = 50V
di/dt = 100A/µs
c
TJ = 25°C, IS = 7.6A, VGS = 0V
i
showing the
integral reverse
p-n junction diode.
ID = 7.6A
VDS = 120V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V
VDS = 10V, ID = 7.6A
VDS = 75V




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