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IC62LV12816DL Datasheet(数据表) 6 Page - Integrated Circuit Solution Inc

部件型号  IC62LV12816DL
说明  128 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM
下载  12 Pages
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制造商  ICSI [Integrated Circuit Solution Inc]
网页  http://www.icsi.com.tw
标志 ICSI - Integrated Circuit Solution Inc

IC62LV12816DL Datasheet(HTML) 6 Page - Integrated Circuit Solution Inc

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Integrated Circuit Solution Inc.
LPSR025-0A 6/7/2002
IC62LV12816DL
IC62LV12816DLL
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-55
-70
-100
Symbol Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tRC
Read Cycle Time
55
70
100
ns
tAA
Address Access Time
55
70
100
ns
tOHA
Output Hold Time
10
10
15
ns
tACE
CE Access Time
55
70
100
ns
tDOE
OE Access Time
30
35
50
ns
tHZOE(2) OE to High-Z Output
20
25
30
ns
tLZOE(2)
OE to Low-Z Output
5
5
5
ns
tHZCE(2) CE to High-Z Output
0
20
0
25
0
30
ns
tLZCE(2)
CE to Low-Z Output
10
10
10
ns
tBA
LB, UB Access Time
55
70
100
ns
tHZB
LB, UB o High-Z Output
0
25
0
25
0
35
ns
tLZB
LB. UB to Low-Z Output
0
0
0
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels
of 0.4V to 2.2V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
IC62LV12816DLL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-55
-70
-100
Symbol Parameter
Test Conditions
Min. Max.
Min. Max.
Min. Max.
Unit
ICC
Vcc Dynamic Operating
VCC = Max
Com.
40
30
20
mA
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
45
35
25
ISB1
TTL Standby Current
VCC = Max.,
Com.
0.5
0.5
0.5
mA
(TTL Inputs)
VIN = VIH or VIL,
Ind.
1.0
1.0
1.0
CE1 = VIH, CE2 = VIL
ISB2
CMOS Standby
VCC = Max., f = 0
Com.
10
10
10
µA
Current (CMOS Inputs)
CE1
≥ VCC – 0.2V,
Ind.
15
15
15
or CE2
≤ 0.2V
other input = 0-VCC, f = 0
OR
ULB Control
VCC = Max., CE1 = VIL, CE2 = VIH
VIN
≤ 0.2V, f = 0, UB / LB = VCC – 0.2V
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.




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