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NLAS9431 Datasheet(数据表) 1 Page - ON Semiconductor

部件型号  NLAS9431
说明  Low Voltage Single Supply Dual DPDT Analog Switch
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

NLAS9431 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 0
1
Publication Order Number:
NLAS9431/D
NLAS9431
Low Voltage Single Supply
Dual DPDT Analog Switch
The NLAS9431 is an advanced dual−independent CMOS double
pole−double throw (DPDT) analog switch fabricated with silicon
gate CMOS technology. It achieves high speed propagation delays
and low ON resistances while maintaining CMOS low power
dissipation. This DPDT controls analog and digital voltages that may
vary across the full power−supply range (from VCC to GND).
The device has been designed so the ON resistance (RON) is much
lower and more linear over input voltage than RON of typical CMOS
analog switches.
The channel select input is compatible with standard CMOS outputs.
The channel select input structure provides protection when
voltages between 0 V and 5.5 V are applied, regardless of the supply
voltage. This input structure helps prevent device destruction caused
by supply voltage − input/output voltage mismatch, battery backup,
hot insertion, etc.
The NLAS9431 can also be used as a quad 2−to−1 multiplexer−
demultiplexer analog switch with two Select pins that each controls
two multiplexer−demultiplexers.
Direct Battery Connection
Channel Select Input Over−Voltage Tolerant to 5.5 V
Fast Switching and Propagation Speeds
Break−Before−Make Circuitry
Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C
Diode Protection Provided on Channel Select Input
Improved Linearity and Lower ON Resistance over Input Voltage
Latch−up Performance Exceeds 300 mA
Chip Complexity: 158 FETs
16−Lead WQFN Package, 1.8 mm x 2.6 mm
This is a Pb−Free Device
MARKING
DIAGRAMS
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
BA
= Specific Device Code
M
= Date Code & Assembly Location
G
= Pb−Free Device
WQFN16
CASE 488AP
http://onsemi.com
BA M
G
16
1




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