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S29GL128N90TFI020 数据表(PDF) 87 Page - SPANSION |
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S29GL128N90TFI020 数据表(HTML) 87 Page - SPANSION |
87 / 100 page S29GL-N_00_B3 October 13, 2006 S29GL-N MirrorBit™ Flash Family 85 Data Sheet AC Characteristics Alternate CE# Controlled Erase and Program Operations- S29GL128N, S29GL256N, S29GL512N Notes: 1. Not 100% tested. 2. See AC Characteristics‚ on page 77 for more information. 3. For 1–16 words/1–32 bytes programmed. 4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation. 5. Unless otherwise indicated, AC specifications for 90 ns, 100ns, and 110 ns speed options are tested with VIO = VCC = 3 V. AC specifications for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V. 6. 90 ns speed option only applicable to S29GL128N and S29GL256N. Parameter Speed Options JEDEC Std. Description 90 (Note 6) 100 110 110 Unit tAVAV tWC Write Cycle Time (Note 1) Min 90 100 110 110 ns tAVWL tAS Address Setup Time Min 0 ns TASO Address Setup Time to OE# low during toggle bit polling Min 15 ns tELAX tAH Address Hold Time Min 45 ns tAHT Address Hold Time From CE# or OE# high during toggle bit polling Min 0 ns tDVEH tDS Data Setup Time Min 45 ns tEHDX tDH Data Hold Time Min 0 ns tCEPH CE# High during toggle bit polling Min 20 ns tOEPH OE# High during toggle bit polling Min 20 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP CE# Pulse Width Min 35 ns tEHEL tCPH CE# Pulse Width High Min 30 ns tWHWH1 tWHWH1 Write Buffer Program Operation (Notes 2, 3) Typ 240 µs Effective Write Buffer Program Operation (Notes 2, 4) Per Word Typ 15 µs Effective Accelerated Write Buffer Program Operation (Notes 2, 4) Per Word Typ 13.5 µs Program Operation (Note 2) Word Typ 60 µs Accelerated Programming Operation (Note 2) Word Typ 54 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec |
类似零件编号 - S29GL128N90TFI020 |
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类似说明 - S29GL128N90TFI020 |
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