数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

AM29BL162CB-90R 数据表(PDF) 4 Page - SPANSION

部件名 AM29BL162CB-90R
功能描述  16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
Download  50 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  SPANSION [SPANSION]
网页  http://www.spansion.com
标志 SPANSION - SPANSION

AM29BL162CB-90R 数据表(HTML) 4 Page - SPANSION

  AM29BL162CB-90R Datasheet HTML 1Page - SPANSION AM29BL162CB-90R Datasheet HTML 2Page - SPANSION AM29BL162CB-90R Datasheet HTML 3Page - SPANSION AM29BL162CB-90R Datasheet HTML 4Page - SPANSION AM29BL162CB-90R Datasheet HTML 5Page - SPANSION AM29BL162CB-90R Datasheet HTML 6Page - SPANSION AM29BL162CB-90R Datasheet HTML 7Page - SPANSION AM29BL162CB-90R Datasheet HTML 8Page - SPANSION AM29BL162CB-90R Datasheet HTML 9Page - SPANSION Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 50 page
background image
2
Am29BL162C
July 8, 2005
DA T A
SH EET
GENERAL DESCRIPTION
The Am29BL162C is a 16 Mbit, 3.0 Volt-only burst
mode Flash memory devices organized as 1,048,576
words. The device is offered in a 56-pin SSOP
package. These devices are designed to be pro-
grammed in-system with the standard system 3.0-volt
VCC supply. A 12.0-volt VPP or 5.0 VCC is not required
for program or erase operations. The device can also
be programmed in standard EPROM programmers.
The device offers access times of 65, 70, 90, and 120
ns, allowing high speed microprocessors to operate
without wait states. To eliminate bus contention the
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
Burst Mode Features
The Am29BL162C offers a Linear Burst mode—a
32 word sequential burst with wrap around—in a
bottom boot configuration only. This devices require
additional control pins for burst operations: Load
Burst Address (LBA#), Burst Address Advance
(BAA#), and Clock (CLK). This implementation allows
easy interface with minimal glue logic to a wide range
of microprocessors/microcontrollers for high perfor-
mance read operations.
AMD Flash Memory Features
Each device requires only a single 3.0 volt power
supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations. The I/O and control
signals are 5V tolerant.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using stan-
dard microprocessor write timings. Register contents
serve as input to an internal state-machine that con-
trols the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data
or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low VCC
detector that automatically inhibits write operations dur-
ing power transitions. The hardware sector protection
feature disables both program and erase operations in
any combination of the sectors of memory. This can be
achieved in-system or via programming equipment.
The Erase Suspend/Erase Resume feature enables
the user to put erase on hold for any period of time to
read data from, or program data to, any sector that is
not selected for erasure. True background erase can
thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When ad-
dresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. The
data is programmed using hot electron injection.


类似零件编号 - AM29BL162CB-90R

制造商部件名数据表功能描述
logo
Advanced Micro Devices
AM29BL162CB-90RZE AMD-AM29BL162CB-90RZE Datasheet
821Kb / 52P
   16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL162CB-90RZF AMD-AM29BL162CB-90RZF Datasheet
821Kb / 52P
   16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL162CB-90RZI AMD-AM29BL162CB-90RZI Datasheet
821Kb / 52P
   16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL162CB-90RZK AMD-AM29BL162CB-90RZK Datasheet
821Kb / 52P
   16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
More results

类似说明 - AM29BL162CB-90R

制造商部件名数据表功能描述
logo
Advanced Micro Devices
AM29BL162C AMD-AM29BL162C Datasheet
821Kb / 52P
   16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
logo
SPANSION
AM29BL162C SPANSION-AM29BL162C_03 Datasheet
298Kb / 19P
   16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1
AM29BL802C SPANSION-AM29BL802C Datasheet
768Kb / 46P
   8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
logo
Advanced Micro Devices
AM29BL802C AMD-AM29BL802C Datasheet
768Kb / 46P
   8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29LV160B-1 AMD-AM29LV160B-1 Datasheet
695Kb / 48P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160D AMD-AM29LV160D Datasheet
1Mb / 49P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160D AMD-AM29LV160D_06 Datasheet
1Mb / 52P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160B AMD-AM29LV160B Datasheet
649Kb / 46P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
logo
Excel Semiconductor Inc...
ES29LV160F EXCELSEMI-ES29LV160F Datasheet
1Mb / 71P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
logo
Advanced Micro Devices
AM29LV160B AMD-AM29LV160B_05 Datasheet
1Mb / 54P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com