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74AUP1G332GM 数据表(PDF) 9 Page - NXP Semiconductors |
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74AUP1G332GM 数据表(HTML) 9 Page - NXP Semiconductors |
9 / 18 page 74AUP1G332_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Preliminary data sheet Rev. 01.00 — 27 February 2006 9 of 18 Philips Semiconductors 74AUP1G332 Low-power 3-input OR gate 12. Dynamic characteristics Table 9: Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8 Symbol Parameter Conditions Min Typ [1] Max Unit Tamb = 25 °C; CL = 5 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay A, B and C to Y see Figure 7 VCC = 0.8 V - 17.6 - ns VCC = 1.1 V to 1.3 V 2.3 5.2 10.2 ns VCC = 1.4 V to 1.6 V 1.7 3.7 6.0 ns VCC = 1.65 V to 1.95 V 1.6 3.0 4.7 ns VCC = 2.3 V to 2.7 V 1.4 2.3 3.3 ns VCC = 3.0 V to 3.6 V 1.2 2.1 2.9 ns Tamb = 25 °C; CL = 10 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay A, B and C to Y see Figure 7 VCC = 0.8 V - 17.6 - ns VCC = 1.1 V to 1.3 V 2.5 6.1 11.9 ns VCC = 1.4 V to 1.6 V 2.2 4.3 7.1 ns VCC = 1.65 V to 1.95 V 2.1 3.5 5.4 ns VCC = 2.3 V to 2.7 V 1.7 2.9 4.0 ns VCC = 3.0 V to 3.6 V 1.5 2.6 3.7 ns Tamb = 25 °C; CL = 15 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay A, B and C to Y see Figure 7 VCC = 0.8 V - 23.6 - ns VCC = 1.1 V to 1.3 V 2.9 6.9 13.5 ns VCC = 1.4 V to 1.6 V 2.5 4.9 7.8 ns VCC = 1.65 V to 1.95 V 2.2 4.0 6.2 ns VCC = 2.3 V to 2.7 V 2.0 3.3 4.7 ns VCC = 3.0 V to 3.6 V 1.9 3.1 4.2 ns Tamb = 25 °C; CL = 30 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay A, B and C to Y see Figure 7 VCC = 0.8 V - 36.3 - ns VCC = 1.1 V to 1.3 V 3.6 9.2 17.9 ns VCC = 1.4 V to 1.6 V 3.2 6.4 10.4 ns VCC = 1.65 V to 1.95 V 3.0 5.3 8.3 ns VCC = 2.3 V to 2.7 V 2.8 4.4 6.2 ns VCC = 3.0 V to 3.6 V 2.6 4.2 5.5 ns |
类似零件编号 - 74AUP1G332GM |
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类似说明 - 74AUP1G332GM |
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