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CS200A 数据表(PDF) 1 Page - Fujitsu Component Limited.

部件名 CS200A
功能描述  65nm CMOS Technology
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制造商  FUJITSU [Fujitsu Component Limited.]
网页  http://edevice.fujitsu.com/fmd/en/index.html
标志 FUJITSU - Fujitsu Component Limited.

CS200A 数据表(HTML) 1 Page - Fujitsu Component Limited.

  CS200A Datasheet HTML 1Page - Fujitsu Component Limited. CS200A Datasheet HTML 2Page - Fujitsu Component Limited.  
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Features
The 30nm long gate, only 75% the size of the
CS100 transistors.
• 20 to 30% faster performance than the 90nm
generation.
• Transistor density doubled compared with the
90nm generation.
• SRAM cell area reduced 50% compared with the
90nm generation.
65nm CMOS Technology, CS200 / CS200A
Description
As miniaturization of silicon devices progresses,
Fujitsu provides the most competitive, world-class
technology to ASIC and COT customers. Fujitsu's
65nm technology has shrunk gates by 25% when
compared to the 90nm technology.
Fujitsu will start tape-out acceptance for the
technology in early 2006.
Specifications
65nm (CS200)
65nm (CS200A)
Gate length
30nm
50nm
Core VDD
1.0V
1.2V
Gate oxide thickness (physical)
1.1nm
1.7nm
Gate electrode
NiSi / Poly-Si
CoSi2 / Poly-Si
Source / drain electrode
NiSi
CoSi2
Interconnects
11-Cu + 1-Al
Metal 1 pitch
0.18µm
Inter-level dielectric
Porous ULK (k = 2.25)
Drain current enhancement
Advanced stress control


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