数据搜索系统,热门电子元器件搜索 |
|
CS200A 数据表(PDF) 1 Page - Fujitsu Component Limited. |
|
CS200A 数据表(HTML) 1 Page - Fujitsu Component Limited. |
1 / 2 page Features • The 30nm long gate, only 75% the size of the CS100 transistors. • 20 to 30% faster performance than the 90nm generation. • Transistor density doubled compared with the 90nm generation. • SRAM cell area reduced 50% compared with the 90nm generation. 65nm CMOS Technology, CS200 / CS200A Description As miniaturization of silicon devices progresses, Fujitsu provides the most competitive, world-class technology to ASIC and COT customers. Fujitsu's 65nm technology has shrunk gates by 25% when compared to the 90nm technology. Fujitsu will start tape-out acceptance for the technology in early 2006. Specifications 65nm (CS200) 65nm (CS200A) Gate length 30nm 50nm Core VDD 1.0V 1.2V Gate oxide thickness (physical) 1.1nm 1.7nm Gate electrode NiSi / Poly-Si CoSi2 / Poly-Si Source / drain electrode NiSi CoSi2 Interconnects 11-Cu + 1-Al Metal 1 pitch 0.18µm Inter-level dielectric Porous ULK (k = 2.25) Drain current enhancement Advanced stress control |
类似零件编号 - CS200A |
|
类似说明 - CS200A |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |