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BFR93AT 数据表(PDF) 2 Page - NXP Semiconductors |
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BFR93AT 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 16 page 2000 Mar 09 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT416 (SC-75) package. APPLICATIONS Designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. The BFR93AT uses the same die as the SOT23 version: BFR93A. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector fpage 12 3 MBK090 Top view Marking code: R2. Fig.1 SOT416. QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 15 V VCEO collector-emitter voltage open base −− 12 V IC collector current (DC) −− 35 mA Ptot total power dissipation Ts ≤ 75 °C; note 1 −− 150 mW hFE DC current gain IC = 30 mA; VCE =5V 40 90 − Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz; Tamb =25 °C − 0.6 − pF fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 4 5 − GHz GUM maximum unilateral power gain IC = 30 mA; VCE =8V; Tamb =25 °C; f = 1 GHz − 13 − dB f = 2 GHz − 8 − dB F noise figure IC = 5 mA; VCE = 8 V; f = 1 GHz; Γs = Γopt − 1.5 − dB Tj junction temperature −− 150 °C |
类似零件编号 - BFR93AT |
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类似说明 - BFR93AT |
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