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BFR93AT 数据表(PDF) 6 Page - NXP Semiconductors |
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BFR93AT 数据表(HTML) 6 Page - NXP Semiconductors |
6 / 16 page 2000 Mar 09 6 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT 0 30 20 10 0 10 20 MBG202 30 GUM MSG IC (mA) gain (dB) Fig.6 Gain as a function of collector current; typical values. VCE = 8 V; f = 500 MHz. 0 30 20 10 0 10 20 MBG201 30 MSG GUM gain (dB) IC (mA) Fig.7 Gain as a function of collector current; typical values. VCE = 8 V; f = 1 GHz. handbook, halfpage 50 0 10 MBG200 10 2 10 3 10 4 10 20 30 40 f (MHz) GUM Gmax MSG gain (dB) Fig.8 Gain as a function of frequency; typical values. VCE = 8 V; IC =10mA. handbook, halfpage 50 0 10 MBG207 10 2 10 3 10 4 10 20 30 40 f (MHz) GUM Gmax MSG gain (dB) Fig.9 Gain as a function of frequency; typical values. VCE = 8 V; IC =30mA. |
类似零件编号 - BFR93AT |
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类似说明 - BFR93AT |
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