ISL1218IBZ datasheet(4/21 Pages) INTERSIL

部件名	ISL1218IBZ

功能描述	Low Power RTC with Battery Backed SRAM

Download	21 Pages

Scroll/Zoom	100%

制造商	INTERSIL [Intersil Corporation]

网页	http://www.intersil.com/cda/home

标志

4 / 21 page

4

FN6313.0

June 22, 2006

Hysteresis

SDA and SCL Input Buffer Hysteresis

0.05 x

VDD

V

VOL

SDA Output Buffer LOW Voltage,

Sinking 3mA

00.4

V

Cpin

SDA and SCL Pin Capacitance

TA = 25°C, f = 1MHz, VDD = 5V,

VIN =0V, VOUT = 0V

10

pF

fSCL

SCL Frequency

400

kHz

tIN

Pulse Width Suppression Time at SDA

and SCL Inputs

Any pulse narrower than the max spec

is suppressed.

50

ns

tAA

SCL Falling Edge to SDA Output Data

Valid

SCL falling edge crossing 30% of VDD,

until SDA exits the 30% to 70% of VDD

window.

900

ns

tBUF

Time the Bus Must be Free before the

Start of a New Transmission

SDA crossing 70% of VDD during a

STOP condition, to SDA crossing 70%

of VDD during the following START

condition.

1300

ns

tLOW

Clock LOW Time

Measured at the 30% of VDD crossing.

1300

ns

tHIGH

Clock HIGH Time

Measured at the 70% of VDD crossing.

600

ns

tSU:STA

START Condition Setup Time

SCL rising edge to SDA falling edge.

Both crossing 70% of VDD.

600

ns

tHD:STA

START Condition Hold Time

From SDA falling edge crossing 30% of

VDD to SCL falling edge crossing 70%

of VDD.

600

ns

tSU:DAT

Input daTa Setup Time

From SDA exiting the 30% to 70% of

VDD window, to SCL rising edge

crossing 30% of VDD

100

ns

tHD:DAT

Input Data Hold Time

From SCL falling edge crossing 30% of

VDD to SDA entering the 30% to 70%

of VDD window.

0

900

ns

tSU:STO

STOP Condition Setup Time

From SCL rising edge crossing 70% of

VDD, to SDA rising edge crossing 30%

of VDD.

600

ns

tHD:STO

STOP Condition Hold Time

From SDA rising edge to SCL falling

edge. Both crossing 70% of VDD.

600

ns

tDH

Output Data Hold Time

From SCL falling edge crossing 30% of

VDD, until SDA enters the 30% to 70%

of VDD window.

0ns

tR

SDA and SCL Rise Time

From 30% to 70% of VDD

20 +

0.1 x Cb

300

ns

6

tF

SDA and SCL Fall Time

From 70% to 30% of VDD

20 +

0.1 x Cb

300

ns

6

Cb

Capacitive Loading of SDA or SCL

Total on-chip and off-chip

10

400

pF

6

Rpu

SDA and SCL Bus Pull-up Resistor

Off-chip

Maximum is determined by tR and tF.

For Cb = 400pF, max is about 2~2.5k

Ω.

For Cb = 40pF, max is about 15~20k

Ω

1k

Ω

6

NOTES:

2. IRQ and FOUT Inactive.

3. LPMODE = 0 (default).

4. In order to ensure proper timekeeping, the VDD SR- specification must be followed.

5. Typical values are for T = 25°C and 3.3V supply voltage.

6. These are I2C specific parameters and are not directly tested, however they are used during device testing to validate device specification.

7. A write to register 08h should only be done if VDD > VBAT, otherwise the device will be unable to communicate using I

2C.

Serial Interface Specifications

Over the recommended operating conditions unless otherwise specified. (Continued)

SYMBOL

PARAMETER

TEST CONDITIONS

MIN

TYP

(Note 5)

MAX

UNITS

NOTES

ISL1218

类似零件编号 - ISL1218IBZ

制造商	部件名	数据表	功能描述
Renesas Technology Corp	ISL1218IBZ	883Kb / 21P	Low Power RTC with Battery Backed SRAM
Renesas Technology Corp	ISL1218IBZ-T	883Kb / 21P	Low Power RTC with Battery Backed SRAM

More results

类似说明 - ISL1218IBZ

制造商	部件名	数据表	功能描述
Intersil Corporation	ISL1208	348Kb / 21P	Low Power RTC with Battery Backed SRAM
Intersil Corporation	ISL1208IRT8Z	406Kb / 24P	Low Power RTC with Battery Backed SRAM
Renesas Technology Corp	ISL1218	883Kb / 21P	Low Power RTC with Battery Backed SRAM
Intersil Corporation	ISL12022MR5421	401Kb / 29P	Low Power RTC with Battery Backed SRAM, Integrated 5ppm
	ISL1221	649Kb / 24P	Low Power RTC with Battery Backed
	ISL1209	416Kb / 24P	Low Power RTC with Battery Backed SRAM and Event Detection
	ISL1219	643Kb / 24P	Low Power RTC with Battery Backed SRAM and Event Detection
	ISL1209	358Kb / 24P	Low Power RTC with Battery Backed SRAM and Event Detection
Renesas Technology Corp	ISL1219	994Kb / 24P	Low Power RTC with Battery Backed SRAM and Event Detection
Renesas Technology Corp	ISL1209	998Kb / 25P	Low Power RTC with Battery Backed SRAM and Event Detection