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MRFG35010AR1 数据表(PDF) 6 Page - Freescale Semiconductor, Inc

部件名 MRFG35010AR1
功能描述  Gallium Arsenide PHEMT RF Power Field Effect Transistor
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制造商  FREESCALE [Freescale Semiconductor, Inc]
网页  http://www.freescale.com
标志 FREESCALE - Freescale Semiconductor, Inc

MRFG35010AR1 数据表(HTML) 6 Page - Freescale Semiconductor, Inc

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6
RF Device Data
Freescale Semiconductor
MRFG35010AR1
TYPICAL CHARACTERISTICS
NOTE: Data is generated from the test circuit shown.
40
2
14
20
0
60
Pout, OUTPUT POWER (dBm)
Figure 5. Single-Carrier W-CDMA Power Gain
and Drain Efficiency versus Output Power
40
12
10
8
20
24
30
28
32
36
6
10
Gps
ηD
4
50
40
−60
−20
20
−30
−10
IRL
ACPR
Pout, OUTPUT POWER (dBm)
Figure 6. Single-Carrier W-CDMA ACPR and
Input Return Loss versus Output Power
−30
−40
−50
−15
24
28
32
−20
−25
VDS = 12 Vdc, IDQ = 140 mA, f = 3550 MHz, Single−Carrier
W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
36
VDS = 12 Vdc, IDQ = 140 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)


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