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SI6866BDQ 数据表(PDF) 2 Page - Vishay Siliconix |
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SI6866BDQ 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 3 page Vishay Siliconix SPICE Device Model Si6866BDQ SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.1 V On-State Drain Current a ID(on) VDS = 5 V, VGS = 4.5 V 115 A VGS = 4.5 V, ID = 6 A 0.020 0.022 Drain-Source On-State Resistance a rDS(on) VGS = 2.5 V, ID = 4.9 A 0.032 0.033 Ω Forward Transconductance a gfs VDS = 10 V, ID = 6 A 21 25 Forward Voltage a VSD IS = 1.5 A, VGS = 0 V 0.80 0.75 V Dynamic b Total Gate Charge Qg 7.2 7.5 Gate-Source Charge Qgs 1.4 1.4 Gate-Drain Charge Qgd VDS = 10 V, VGS = 4.5 V, ID = 6 A 2.2 2.2 nC Turn-On Delay Time td(on) 26 45 Rise Time tr 38 53 Turn-Off Delay Time td(off) 30 30 Fall Time tf VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 10 13 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 72703 S-60146 Rev. B, 13-Feb-06 |
类似零件编号 - SI6866BDQ |
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类似说明 - SI6866BDQ |
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