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ISL9N316AD3ST Datasheet(数据表) 4 Page - Fairchild Semiconductor |
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ISL9N316AD3ST Datasheet(HTML) 4 Page - Fairchild Semiconductor |
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4 page 
©2002 Fairchild Semiconductor Corporation Rev. B, February 2002 Figure 5. Transfer Characteristics Figure 6. Saturation Characteristics Figure 7. Drain to Source On Resistance vs Gate Voltage and Drain Current Figure 8. Normalized Drain to Source On Resistance vs Junction Temperature Figure 9. Normalized Gate Threshold Voltage vs Junction Temperature Figure 10. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Typical Characteristic (Continued) 0 20 40 60 80 100 456 1 VGS, GATE TO SOURCE VOLTAGE (V) 2 3 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V TJ = -55 oC TJ = 175 oC TJ = 25 oC 0 20 60 80 100 0 0.5 1.0 1.5 2.0 40 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 4.5V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 4.0V TC = 25 oC VGS = 10V VGS = 3V ID = 10A VGS, GATE TO SOURCE VOLTAGE (V) ID = 48A 20 30 40 24 68 10 10 ID = 28A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TJ, JUNCTION TEMPERATURE ( oC) 0.5 1.0 1.5 2.0 -80 -40 0 40 80 120 160 200 VGS = 10V, ID = 48A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0.4 0.6 0.8 1.0 1.2 1.4 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) VGS = VDS, ID = 250µA TJ, JUNCTION TEMPERATURE ( oC) 0.9 1.0 1.1 -80 -40 0 40 80 120 160 200 1.2 ID = 250µA |
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