BCY59X datasheet(2/8 Pages) PHILIPS

部件名	BCY59X

功能描述	NPN switching transistors

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制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

标志

2 / 8 page

1997 Jun 17

2

Philips Semiconductors

Product speciﬁcation

NPN switching transistors

BCY58; BCY59

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 45 V).

APPLICATIONS

• Switching and amplification.

DESCRIPTION

NPN switching transistor in a TO-18 metal package.

PNP complements: BCY78 and BCY79.

PINNING

DESCRIPTION

1

emitter

2

base

3

collector, connected to case

Fig.1 Simplified outline (TO-18) and symbol.

handbook, halfpage

MAM264

1

3

2

3

1

2

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

BCY58

−−

32

V

BCY59

−−

45

V

VCEO

collector-emitter voltage

open base

BCY58

−−

32

V

BCY59

−−

45

V

IC

collector current (DC)

−−

100

mA

Ptot

total power dissipation

Tamb ≤ 45 °C

−−

340

mW

Tcase ≤ 45 °C

−−

1W

hFE

DC current gain

IC = 2 mA; VCE =5V

BCY58/VII; BCY59/VII

120

170

220

BCY58/VIII; BCY59/VIII

180

250

310

BCY58/IX; BCY59/IX

250

350

460

BCY58/X; BCY59/X

380

500

630

fT

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

150

−−

MHz

toff

turn-off time

ICon = 10 mA; IBon = 1 mA; IBoff = −1mA

−

480

800

ns

ICon = 100 mA; IBon = 10 mA; IBoff = −10 mA −

450

800

ns

类似零件编号 - BCY59X

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类似说明 - BCY59X

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