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BCY89 数据表(PDF) 2 Page - NXP Semiconductors

部件名 BCY89
功能描述  NPN general purpose transistors
Download  8 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BCY89 数据表(HTML) 2 Page - NXP Semiconductors

  BCY89 Datasheet HTML 1Page - NXP Semiconductors BCY89 Datasheet HTML 2Page - NXP Semiconductors BCY89 Datasheet HTML 3Page - NXP Semiconductors BCY89 Datasheet HTML 4Page - NXP Semiconductors BCY89 Datasheet HTML 5Page - NXP Semiconductors BCY89 Datasheet HTML 6Page - NXP Semiconductors BCY89 Datasheet HTML 7Page - NXP Semiconductors BCY89 Datasheet HTML 8Page - NXP Semiconductors  
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1997 Jun 20
2
Philips Semiconductors
Product specification
NPN general purpose transistors
BCY87; BCY88; BCY89
FEATURES
• Low current (max. 30 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Differential amplifier applications in general industrial
service e.g. instrumentation and control
• The BCY87 and BCY88 are intended for use in
pre-stages of differential amplifiers where low offset, low
drift and low noise are of prime importance
• The BCY89 is intended for use in second stages of
differential amplifiers, long-tailed pairs and more general
applications.
DESCRIPTION
Matched dual NPN transistors in a TO-71; SOT31 metal
package. Products are divided into 3 types according to
their matching accuracy.
PINNING
Note
1. All leads insulated from the case.
PIN(1)
DESCRIPTION
1
emitter TR1
2
emitter TR2
3
collector TR2
4
basis TR2
5
basis TR1
6
collector TR1
Fig.1
Simplified outline (TO-71; SOT31)
and symbol.
handbook, halfpage
MAM351
13
5
TR1
TR2
6
2
4
1
3
4
5
6
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
45
V
VCEO
collector-emitter voltage
open base
40
V
Ptot
total power dissipation
Tamb ≤ 25 °C
150
mW
hFE
DC current gain
VCE =10V
BCY87
IC =5 µA80
BCY88
IC = 500 µA
120
600
BCY89
IC = 10 mA
100
600
hFE
DC current gain
IC =50 µA; VCE = 10 V
100
450
fT
transition frequency
IC = −50 µA; VCE = 10 V; f = 100 MHz
10
MHz
IC = −500 µA; VCE = 10 V; f = 100 MHz
50
MHz


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