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BCY89 数据表(PDF) 2 Page - NXP Semiconductors |
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BCY89 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 Jun 20 2 Philips Semiconductors Product specification NPN general purpose transistors BCY87; BCY88; BCY89 FEATURES • Low current (max. 30 mA) • Low voltage (max. 45 V). APPLICATIONS • Differential amplifier applications in general industrial service e.g. instrumentation and control • The BCY87 and BCY88 are intended for use in pre-stages of differential amplifiers where low offset, low drift and low noise are of prime importance • The BCY89 is intended for use in second stages of differential amplifiers, long-tailed pairs and more general applications. DESCRIPTION Matched dual NPN transistors in a TO-71; SOT31 metal package. Products are divided into 3 types according to their matching accuracy. PINNING Note 1. All leads insulated from the case. PIN(1) DESCRIPTION 1 emitter TR1 2 emitter TR2 3 collector TR2 4 basis TR2 5 basis TR1 6 collector TR1 Fig.1 Simplified outline (TO-71; SOT31) and symbol. handbook, halfpage MAM351 13 5 TR1 TR2 6 2 4 1 3 4 5 6 2 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter − 45 V VCEO collector-emitter voltage open base − 40 V Ptot total power dissipation Tamb ≤ 25 °C − 150 mW hFE DC current gain VCE =10V BCY87 IC =5 µA80 − BCY88 IC = 500 µA 120 600 BCY89 IC = 10 mA 100 600 hFE DC current gain IC =50 µA; VCE = 10 V 100 450 fT transition frequency IC = −50 µA; VCE = 10 V; f = 100 MHz 10 − MHz IC = −500 µA; VCE = 10 V; f = 100 MHz 50 − MHz |
类似零件编号 - BCY89 |
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类似说明 - BCY89 |
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