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BCX53-16 数据表(PDF) 3 Page - NXP Semiconductors

部件名 BCX53-16
功能描述  PNP medium power transistors
Download  8 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BCX53-16 数据表(HTML) 3 Page - NXP Semiconductors

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1999 Apr 19
3
Philips Semiconductors
Product specification
PNP medium power transistors
BCX51; BCX52; BCX53
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BCX51
−−45
V
BCX52
−−60
V
BCX53
−−100
V
VCEO
collector-emitter voltage
open base
BCX51
−−45
V
BCX52
−−60
V
BCX53
−−80
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−1A
ICM
peak collector current
−−1.5
A
IBM
peak base current
−−200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1.3
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
94
K/W
Rth j-s
thermal resistance from junction to soldering point note 1
14
K/W


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