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SUM40N10-30 数据表(PDF) 2 Page - Vishay Siliconix |
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SUM40N10-30 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 5 page SUM40N10-30 Vishay Siliconix New Product www.vishay.com 2 Document Number: 72134 S-03538—Rev. A, 24-Mar-03 SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 100 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2 4 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA VDS = 80 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V, TJ = 125_C 50 mA g DSS VDS = 80 V, VGS = 0 V, TJ = 175_C 250 m On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 75 A VGS = 10 V, ID = 15 A 0.024 0.030 Drain Source On State Resistancea rDS( ) VGS = 6 V, ID = 10 A 0.026 0.034 W Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 15 A, TJ = 125_C 0.054 W VGS = 10 V, ID = 15 A, TJ = 175_C 0.067 Forward Transconductancea gfs VDS = 15 V, ID = 15 A 10 S Dynamicb Input Capacitance Ciss 2400 Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 270 pF Reverse Transfer Capacitance Crss 90 Total Gate Chargec Qg 35 60 Gate-Source Chargec Qgs VDS = 50 V, VGS = 10 V, ID = 40 A 11 nC Gate-Drain Chargec Qgd DS , GS , D 9 Gate Resistance RG 1.7 W Turn-On Delay Timec td(on) 11 20 Rise Timec tr VDD = 50 V, RL = 1.25 W 12 20 ns Turn-Off Delay Timec td(off) VDD = 50 V, RL = 1.25 W ID ^ 40 A, VGEN = 10 V, RG = 2.5 W 30 45 ns Fall Timec tf 12 20 Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 40 A Pulsed Current ISM 75 A Forward Voltagea VSD IF = 30 A, VGS = 0 V 1.0 1.5 V Reverse Recovery Time trr 60 100 ns Peak Reverse Recovery Current IRM(REC) IF = 30 A, di/dt = 100 A/ms 5 8 A Reverse Recovery Charge Qrr F , m 0.15 0.4 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. |
类似零件编号 - SUM40N10-30 |
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类似说明 - SUM40N10-30 |
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