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ADG859BRYZ-REEL7 数据表(PDF) 4 Page - Analog Devices |
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ADG859BRYZ-REEL7 数据表(HTML) 4 Page - Analog Devices |
4 / 16 page ADG859 Rev. 0 | Page 4 of 16 VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.1 Table 2. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance, RON 3 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IS = −100 mA; 4.3 4.5 4.7 Ω max Figure 16 On Resistance Match Between Channels, ∆RON 0.03 Ω typ VDD = 2.7 V, VS = 1.2 V, IS = −100 mA; ∆RON 0.11 0.15 0.15 Ω max Figure 16 LEAKAGE CURRENTS VDD = 3.6 V Source Off Leakage, IS (Off) ±0.02 nA typ VS = 3 V/1 V, VD = 1 V/3 V; Figure 17 Channel On Leakage, ID, IS (On) ±0.05 nA typ VS = VD = 1 V or 3 V; Figure 18 DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max VDD = 3 V to 3.6 V 0.7 V max VDD = 2.7 V Input Current, IINL or IIN 0.005 μA typ VIN = VINL or VINH ±0.1 ±0.1 μA max Digital Input Capacitance, CIN 4 pF typ DYNAMIC CHARACTERISTICS2 tON 11 ns typ RL = 50 Ω, CL = 35 pF 15 16 17 ns max VS = 1.5 V; Figure 19 tOFF 6 ns typ RL = 50 Ω, CL = 35 pF 9.5 10 11 ns max VS = 1.5 V; Figure 19 Break-Before-Make Time Delay, tBBM 5 ns typ RL = 50 Ω, CL = 35 pF 1 ns min VS1 = VS2 = 1.5 V; Figure 20 Charge Injection ±7 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; Figure 21 Off Isolation −78 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 22 Channel-to-Channel Crosstalk −78 dB typ S1 to S2; RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 23 −3 dB Bandwidth 125 MHz typ RL = 50 Ω, CL = 5 pF; Figure 24 Insertion Loss −0.11 dB typ RL = 50 Ω, CL = 5 pF; Figure 24 Total Harmonic Distortion (THD + N) 0.1 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p; Figure 14 CS (Off) 18 pF typ f = 1 MHz CD, CS (On) 46 pF typ f = 1 MHz POWER REQUIREMENTS VDD = 3.6 V IDD 0.001 1 μA typ μA max Digital inputs = 0 V or 3.6 V 1 Temperature range is −40°C to +125°C. 2 Guaranteed by design; not subject to production test. |
类似零件编号 - ADG859BRYZ-REEL7 |
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类似说明 - ADG859BRYZ-REEL7 |
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