BCP69 datasheet(3/8 Pages) PHILIPS

部件名	BCP69

功能描述	PNP medium power transistor

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制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

标志

3 / 8 page

1999 Apr 08

3

Philips Semiconductors

Product speciﬁcation

PNP medium power transistor

BCP69

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

91

K/W

Rth j-s

thermal resistance from junction to soldering point

10

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −25 V

−−−100 nA

IE = 0; VCB = −25 V; Tj = 150 °C

−−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−100 nA

hFE

DC current gain

IC = −5 mA; VCE = −10 V

50

−−

IC = −500 mA; VCE = −1 V; see Fig.2

85

−

375

IC = −1 A; VCE = −1 V; see Fig.2

60

−−

DC current gain

IC = −500 mA; VCE = −1 V; see Fig.2

BCP69-16

100

−

250

BCP69-25

160

−

375

VCEsat

collector-emitter saturation voltage IC = −1 A; IB = −100 mA

−−−500 mV

VBE

base-emitter voltage

IC = −5 mA; VCE = −10 V

−−620 −

mV

IC = −1 A; VCE = −1V

−−−1V

Cc

collector capacitance

IE =ie = 0; VCB = −5 V; f = 1 MHz

−

48

−

pF

fT

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz 40

−−

MHz

DC current gain ratio of the

complementary pairs

I

C = 0.5 A; VCE =1V

−−

1.6

h

FE1

h

FE2

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