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BCP69 数据表(PDF) 3 Page - NXP Semiconductors |
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BCP69 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 08 3 Philips Semiconductors Product specification PNP medium power transistor BCP69 THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 91 K/W Rth j-s thermal resistance from junction to soldering point 10 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −25 V −−−100 nA IE = 0; VCB = −25 V; Tj = 150 °C −−−10 µA IEBO emitter cut-off current IC = 0; VEB = −5V −−−100 nA hFE DC current gain IC = −5 mA; VCE = −10 V 50 −− IC = −500 mA; VCE = −1 V; see Fig.2 85 − 375 IC = −1 A; VCE = −1 V; see Fig.2 60 −− DC current gain IC = −500 mA; VCE = −1 V; see Fig.2 BCP69-16 100 − 250 BCP69-25 160 − 375 VCEsat collector-emitter saturation voltage IC = −1 A; IB = −100 mA −−−500 mV VBE base-emitter voltage IC = −5 mA; VCE = −10 V −−620 − mV IC = −1 A; VCE = −1V −−−1V Cc collector capacitance IE =ie = 0; VCB = −5 V; f = 1 MHz − 48 − pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 40 −− MHz DC current gain ratio of the complementary pairs I C = 0.5 A; VCE =1V −− 1.6 h FE1 h FE2 ----------- |
类似零件编号 - BCP69 |
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类似说明 - BCP69 |
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