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BC856BT 数据表(PDF) 3 Page - NXP Semiconductors |
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BC856BT 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 26 3 Philips Semiconductors Product specification PNP general purpose transistors BC856T; BC857T THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 833 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −30 V −−−15 nA IE = 0; VCB = −30 V; Tj = 150 °C −−−5 µA IEBO emitter cut-off current IC = 0; VEB = −5V −−−100 nA hFE DC current gain IC = −2 mA; VCE = −5V BC856AT; BC857AT 125 − 250 BC856BT; BC857BT 220 − 475 BC857CT 420 − 800 VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA −−−200 mV IC = −100 mA; IB = −5 mA; note 1 −−−400 mV VBE base-emitter voltage IC = −2 mA; VCE = −5V −600 −−750 mV IC = −10 mA; VCE = −5V −−−820 mV Cc collector capacitance IE =ie = 0; VCB = −10 V; f = 1 MHz −− 2.5 pF Ce emitter capacitance IC =ic = 0; VEB = −500 mV; f = 1 MHz − 10 − pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 −− MHz F noise figure IC = −200 µA; VCE = −5 V; RS =2kΩ; f = 1 kHz; B = 220 Hz −− 10 dB |
类似零件编号 - BC856BT |
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类似说明 - BC856BT |
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