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BC856BT 数据表(PDF) 3 Page - NXP Semiconductors

部件名 BC856BT
功能描述  PNP general purpose transistors
Download  8 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BC856BT 数据表(HTML) 3 Page - NXP Semiconductors

  BC856BT Datasheet HTML 1Page - NXP Semiconductors BC856BT Datasheet HTML 2Page - NXP Semiconductors BC856BT Datasheet HTML 3Page - NXP Semiconductors BC856BT Datasheet HTML 4Page - NXP Semiconductors BC856BT Datasheet HTML 5Page - NXP Semiconductors BC856BT Datasheet HTML 6Page - NXP Semiconductors BC856BT Datasheet HTML 7Page - NXP Semiconductors BC856BT Datasheet HTML 8Page - NXP Semiconductors  
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1999 Apr 26
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856T; BC857T
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
833
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −30 V
−−−15
nA
IE = 0; VCB = −30 V; Tj = 150 °C
−−−5
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5V
−−−100 nA
hFE
DC current gain
IC = −2 mA; VCE = −5V
BC856AT; BC857AT
125
250
BC856BT; BC857BT
220
475
BC857CT
420
800
VCEsat
collector-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA
−−−200 mV
IC = −100 mA; IB = −5 mA; note 1
−−−400 mV
VBE
base-emitter voltage
IC = −2 mA; VCE = −5V
−600 −−750 mV
IC = −10 mA; VCE = −5V
−−−820 mV
Cc
collector capacitance
IE =ie = 0; VCB = −10 V; f = 1 MHz
−−
2.5
pF
Ce
emitter capacitance
IC =ic = 0; VEB = −500 mV; f = 1 MHz
10
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
−−
MHz
F
noise figure
IC = −200 µA; VCE = −5 V; RS =2kΩ;
f = 1 kHz; B = 220 Hz
−−
10
dB


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