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BC636-10 数据表(PDF) 2 Page - NXP Semiconductors |
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BC636-10 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 23 2 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Audio and video amplifiers. DESCRIPTION PNP medium power transistor in a TO-92; SOT54 plastic package. NP complements: BC635, BC637 and BC639. PINNING PIN DESCRIPTION 1 base 2 collector 3 emitter Fig.1 Simplified outline (TO-92; SOT54) and symbol. handbook, halfpage1 3 2 MAM285 2 1 3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC636 −−45 V BC638 −−60 V BC640 −−100 V VCEO collector-emitter voltage open base BC636 −−45 V BC638 −−60 V BC640 −−80 V VEBO emitter-base voltage open collector −−5V IC collector current (DC) −−1A ICM peak collector current −−1.5 A IBM peak base current −−200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 0.83 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
类似零件编号 - BC636-10 |
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类似说明 - BC636-10 |
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