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BDW83B 数据表(PDF) 1 Page - Bourns Electronic Solutions |
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BDW83B 数据表(HTML) 1 Page - Bourns Electronic Solutions |
1 / 5 page BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS P R O D UCT INFORMA TION 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D ● 150 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 6 A SOT-93 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRAAA B C E 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) BDW83 BDW83A BDW83B BDW83C BDW83D VCBO 45 60 80 100 120 V Collector-emitter voltage (IB = 0) (see Note 1) BDW83 BDW83A BDW83B BDW83C BDW83D VCEO 45 60 80 100 120 V Emitter-base voltage VEBO 5V Continuous collector current IC 15 A Continuous base current IB 0.5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 150 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W Unclamped inductive load energy (see Note 4) ½LIC 2 100 mJ Operating junction temperature range Tj -65 to +150 °C Operating temperature range Tstg -65 to +150 °C Operating free-air temperature range TA -65 to +150 °C |
类似零件编号 - BDW83B |
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类似说明 - BDW83B |
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