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STD60N55-1 数据表(PDF) 4 Page - STMicroelectronics |
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STD60N55-1 数据表(HTML) 4 Page - STMicroelectronics |
4 / 12 page Electrical characteristics STD60N55 - STD60N55-1 4/12 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS= 0 55 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc = 125°C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20V ± 200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 24 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 32A 8.0 10.5 m Ω Table 4. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward transconductance VDS =25V, ID=32A 50 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS=0 2200 500 25 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 27V, ID = 65A VGS =10V (see Figure 2) 33.5 12.5 9.5 45 nC nC nC |
类似零件编号 - STD60N55-1 |
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类似说明 - STD60N55-1 |
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