SI6943BDQ datasheet(2/5 Pages) VISHAY

部件名	SI6943BDQ

功能描述	Dual P-Channel 2.5-V (G-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Si6943BDQ

Vishay Siliconix

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Document Number: 72016

S-21780—Rev. A, 07-Oct-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 mA

-0.45

-0.8

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

VDS = -9.6 V, VGS = 0 V

-1

m

Zero Gate Voltage Drain Current

IDSS

VDS = -9.6 V, VGS = 0 V, TJ = 70_C

-5

mA

On-State Drain Currenta

ID(on)

VDS -5 V, VGS = -4.5 V

-10

A

VGS = -4.5 V, ID = -2.5 A

0.06

0.08

W

Drain-Source On-State Resistancea

rDS(on)

VGS = -2.5 V, ID = -1.9 A

0.08

0.105

W

Forward Transconductancea

gfs

VDS = -15 V, ID = -2.5 A

8

S

Diode Forward Voltagea

VSD

IS = -1.0 A, VGS = 0 V

-0.75

-1.2

V

Dynamicb

Total Gate Charge

Qg

5.7

10

Gate-Source Charge

Qgs

VDS = -6 V, VGS = -4.5 V, ID = -2.5 A

0.8

nC

Gate-Drain Charge

Qgd

1.6

Turn-On Delay Time

td(on)

15

25

Rise Time

tr

VDD = -6 V, RL = 6 W

35

60

Turn-Off Delay Time

td(off)

VDD = -6 V, RL = 6 W

ID ^ -1.0 A, VGEN = -4.5 V, RG = 6 W

35

60

ns

Fall Time

tf

30

50

Source-Drain Reverse Recovery Time

trr

IF = -1.0 A, di/dt = 100 A/ms

30

60

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0

4

8

12

16

20

0

1234

5

VGS = 5 thru 3.5 V

TC = -55_C

125

_C

25

_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

1.5 V

3 V

2.5 V

2 V

类似零件编号 - SI6943BDQ

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI6943BDQ	211Kb / 4P	Dual P-Channel 2.5-V (G-S) MOSFET Rev. B, 13-Feb-06
	SI6943BDQ	110Kb / 6P	Dual P-Channel 2.5-V (G-S) MOSFET 01-Jan-2022
	SI6943BDQ	211Kb / 4P	Dual P-Channel 2.5-V (G-S) MOSFET Rev. B, 13-Feb-06
	SI6943BDQ	110Kb / 6P	Dual P-Channel 2.5-V (G-S) MOSFET 01-Jan-2022

More results

类似说明 - SI6943BDQ

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI9933BDY	102Kb / 6P	Dual P-Channel 2.5-V (G-S) MOSFET 18-Jul-08
	SI6963BDQ	69Kb / 5P	Dual P-Channel 2.5-V (G-S) MOSFET Rev. A, 15-Mar-04
	SI5903DC	134Kb / 5P	Dual P-Channel 2.5-V (G-S) MOSFET Rev. B, 05-Aug-02
	SI1903DL	93Kb / 5P	Dual P-Channel 2.5-V (G-S) MOSFET S-50694-Rev. C, 18-Apr-05
	SI6943BDQ	211Kb / 4P	Dual P-Channel 2.5-V (G-S) MOSFET Rev. B, 13-Feb-06
	SI1903DL	110Kb / 5P	Dual P-Channel 2.5-V (G-S) MOSFET 01-Jan-2022
	SI6963BDQ	107Kb / 6P	Dual P-Channel 2.5-V (G-S) MOSFET 01-Jan-2022
	SI5903DC-T1-E3	229Kb / 9P	Dual P-Channel 2.5 V (G-S) MOSFET Rev. C, 08-Mar-10
	SI6963BDQ	210Kb / 4P	Dual P-Channel 2.5-V (G-S) MOSFET Rev. B, 13-Feb-06
	SI4963BDY	71Kb / 5P	Dual P-Channel 2.5-V (G-S) MOSFET Rev. A, 16-Feb-04

More results

SI6943BDQ 数据表(PDF) 2 Page - Vishay Siliconix

SI6943BDQ 数据表(HTML) 2 Page - Vishay Siliconix

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SI6943BDQ 数据表(PDF) 2 Page - Vishay Siliconix

SI6943BDQ 数据表(HTML) 2 Page - Vishay Siliconix

类似零件编号 - SI6943BDQ

类似说明 - SI6943BDQ

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