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STB10NK60ZT4 数据表(PDF) 3 Page - STMicroelectronics |
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STB10NK60ZT4 数据表(HTML) 3 Page - STMicroelectronics |
3 / 19 page STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 1 Absolute maximum ratings 3/19 Table 3. Avalanche characteristics Table 4. Gate-source zener diode 1.1 PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Max Value Unit IAR Avalanche Current, repetitive or Not-Repetitive (pulse width limited by Tj max) 9A EAS Single Pulse Avalanche Energy (starting Tj=25°C, ID=IAR, VDD= 50V) 300 mJ EAR Repetitive Avalanche Energy (pulse width limited by Tj max) 3.5 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit BVGSO Gate-Source Breakdown Voltage Igs=±1mA (Open Drain) 30 V |
类似零件编号 - STB10NK60ZT4 |
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类似说明 - STB10NK60ZT4 |
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