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CY7C1353G 数据表(PDF) 5 Page - Cypress Semiconductor

部件名 CY7C1353G
功能描述  4-Mbit (256K x 18) Flow-through SRAM with NoBL™ Architecture
Download  13 Pages
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制造商  CYPRESS [Cypress Semiconductor]
网页  http://www.cypress.com
标志 CYPRESS - Cypress Semiconductor

CY7C1353G 数据表(HTML) 5 Page - Cypress Semiconductor

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PRELIMINARY
CY7C1353G
Document #: 38-05515 Rev. *A
Page 5 of 13
Linear Burst Address Table (MODE = GND)
First
Address
A1, A0
Second
Address
A1, A0
Third
Address
A1, A0
Fourth
Address
A1, A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
Interleaved Burst Address Table (MODE =
Floating or VDD)
First
Address
A1, A0
Second
Address
A1, A0
Third
Address
A1, A0
Fourth
Address
A1, A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min.
Max.
Unit
IDDZZ
Snooze mode standby current
ZZ > VDD − 0.2V
40
mA
tZZS
Device operation to ZZ
ZZ > VDD − 0.2V
2tCYC
ns
tZZREC
ZZ recovery time
ZZ < 0.2V
2tCYC
ns
tZZI
ZZ active to snooze current
This parameter is sampled
2tCYC
ns
tRZZI
ZZ inactive to exit snooze current
This parameter is sampled
0
ns
Truth Table [2, 3, 4, 5, 6, 7, 8]
Operation
Address
Used
CE1
CE2 CE3 ZZ ADV/LD
WE
BWX OE
CEN
CLK
DQ
Deselect Cycle
None
H
X
X
L
L
X
X
X
L
L->H
tri-state
Deselect Cycle
None
X
X
H
L
L
X
X
X
L
L->H
tri-state
Deselect Cycle
None
X
L
X
L
L
X
X
X
L
L->H
tri-state
Continue Deselect Cycle
None
X
X
X
L
H
X
X
X
L
L->H
tri-state
READ Cycle (Begin Burst)
External
L
H
L
L
L
H
X
L
L
L->H Data Out (Q)
READ Cycle (Continue Burst)
Next
X
X
X
L
H
X
X
L
L
L->H Data Out (Q)
NOP/DUMMY READ (Begin
Burst)
External
L
H
L
L
L
H
X
H
L
L->H
tri-state
DUMMY READ (Continue Burst)
Next
X
X
X
L
H
X
X
H
L
L->H
tri-state
WRITE Cycle (Begin Burst)
External
L
H
L
L
L
L
L
X
L
L->H Data In (D)
WRITE Cycle (Continue Burst)
Next
X
X
X
L
H
X
L
X
L
L->H Data In (D)
NOP/WRITE ABORT (Begin
Burst)
None
L
H
L
L
L
L
H
X
L
L->H
tri-state
WRITE ABORT (Continue Burst)
Next
X
X
X
L
H
X
H
X
L
L->H
tri-state
IGNORE CLOCK EDGE (Stall)
Current
X
X
X
L
X
X
X
X
H
L->H
SNOOZE MODE
None
X
X
X
H
X
X
X
X
X
X
tri-state
Notes:
2.X =”Don't Care.” H = Logic HIGH, L = Logic LOW. BWx = L signifies at least one Byte Write Select is active, BWx = Valid signifies that the desired byte write selects
are asserted, see truth table for details.
3.Write is defined by BWX, and WE. See truth table for Read/Write.
4.When a write cycle is detected, all I/Os are tri-stated, even during byte writes.
5.The DQs and DQP[A:B] pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
6.CEN = H, inserts wait states.
7.Device will power-up deselected and the I/Os in a tri-state condition, regardless of OE.
8.OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQs and DQP[A:B] = tri-state when OE
is inactive or when the device is deselected, and DQs and DQP[A:B] = data when OE is active.


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