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CD214B-R2600 数据表(PDF) 1 Page - Bourns Electronic Solutions

部件名 CD214B-R2600
功能描述  CD214B-R250~R21000 Glass Passivated Rectifiers
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制造商  BOURNS [Bourns Electronic Solutions]
网页  http://www.bourns.com
标志 BOURNS - Bourns Electronic Solutions

CD214B-R2600 数据表(HTML) 1 Page - Bourns Electronic Solutions

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*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD214B-R250~R21000 Glass Passivated Rectifiers
Features
Lead free as standard
RoHS compliant*
Glass passivated chip
Low reverse leakage current
Low forward voltage drop
High current capability
General Information
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Notes:
1 See Forward Derating Curve.
2 Measured @ 1.0 MHz and applied reverse voltage of 4.0 VDC.
3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 ˝ x 0.2 ˝ (5.0 mm x 5.0 mm) copper pad areas.
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip
DO-214AA (SMB) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Glass
Passivated Rectifier Diodes offer a forward current of 2.0 A with a choice of repetitive peak reverse voltage of 50 V up to 1000 V.
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration
minimizes roll away.
Parameter
Symbol
CD214B-R250~R21000
Unit
Operating Temperature Range
TJ
-65 to +175
°C
Storage Temperature Range
TSTG
-65 to +170
°C
Parameter
Symbol
CD214B-
Unit
R250
R2100
R2200
R2400
R2600
R2800
R21000
Maximum Repetitive
Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC
Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Max. Average Forward
Rectified Current1
I(AV)
2.0
A
DC Reverse Current @
Rated DC Blocking Voltage
(@TJ = 25 °C)
IR
5.0
µA
DC Reverse Current @
Rated DC Blocking Voltage
(@TJ = 125 °C)
IR
30
µA
Typical Junction Capacitance2
CJ
25
pF
Maximum Instantaneous
Forward Voltage @ 1 A
VF
1.0
V
Typical Thermal Resistance3
RθJL
16
°C/W
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
(JEDEC Method)
IFSM
65
A


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