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WV3HG264M72EEU806D6SG 数据表(PDF) 7 Page - White Electronic Designs Corporation |
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WV3HG264M72EEU806D6SG 数据表(HTML) 7 Page - White Electronic Designs Corporation |
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7 / 11 page  WV3HG264M72EEU-D6 January 2006 Rev. 0 ADVANCED 7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs AC TIMING PARAMETERS 0°C ≤ TCASE < +85°C; VCCQ = + 1.8V ± 0.1V, VCC = +1.8V ± 0.1V AC CHARACTERISTICS 806 665 534 403 PARAMETER SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX UNIT Clock cycle time CL = 6 tCK (6) TBD TBD ps CL = 5 tCK (5) TBD TBD 3000 8000 ps CL = 4 tCK (4) TBD TBD 3750 8000 3,750 8,000 5,000 8,000 ps CL = 3 tCK (3) TBD TBD 5000 8000 5,000 8,000 5,000 8,000 ps CK high-level width tCH TBD TBD 0.45 0.55 0.45 0.55 0.45 0.55 tCK CK low-level width tCL TBD TBD 0.45 0.55 0.45 0.55 0.45 0.55 tCK Half clock period tHP TBD TBD MIN (tCH, tCL) MIN (tCH, tCL) MIN (tCH, tCL) ps DQ output access time from CK/CK# tAC TBD TBD -450 +450 -500 +500 -600 +600 ps Data-out high-impedance window from CK/CK# tHZ TBD TBD tAC (MAX) tAC (MAX) tAC (MAX) ps Data-out low-impedance window from CK/CK# tLZ TBD TBD tAC (MIN) tAC (MAX) tAC (MIN) tAC (MAX) tAC (MIN) tAC (MAX) ps DQ and DM input setup time relative to DQS tDS TBD TBD 100 100 150 ps DQ and DM input hold time relative to DQS tDH TBD TBD 225 225 275 ps A DQ and DM input pulse width (for each input) tDIPW TBD TBD 0.35 0.35 0.35 tCK Data hold skew factor tQHS TBD TBD 340 400 450 ps DQ…DQS hold, DQS to first DQ to go nonvalid, per access tQH TBD TBD tHP - tQHS tHP - tQHS tHP - tQHS ps Data valid output window (DVW) tDVW TBD TBD tQH - tDQSQ tQH - tDQSQ tQH - tDQSQ ns DQS input high pulse width tDQSH TBD TBD 0.35 0.35 0.35 tCK DQS input low pulse width tDQSL TBD TBD 0.35 0.35 0.35 tCK DQS output access time from CK/CK# tDQSCK TBD TBD -400 +400 -450 +450 -500 +500 ps DQS falling edge to CK rising … setup time tDSS TBD TBD 0.2 0.2 0.2 tCK DQS falling edge from CK rising … hold time tDSH TBD TBD 0.2 0.2 0.2 tCK DQS…DQ skew, DQS to last DQ valid, per group, per access tDQSQ TBD TBD 240 300 350 ps DQS read preamble tRPRE TBD TBD 0.9 1.1 0.9 1.1 0.9 1.1 tCK DQS read postamble tRPST TBD TBD 0.4 0.6 0.4 0.6 0.4 0.6 tCK DQS write preamble setup time tWPRES TBD TBD 000 ps DQS write preamble tWPRE TBD TBD 0.35 0.35 0.35 tCK DQS write postamble tWPST TBD TBD 0.4 0.6 0.4 0.6 0.4 0.6 tCK Write command to first DQS latching transition tDQSS TBD TBD WL - 0.25 WL + 0.25 WL - 0.25 WL + 0.25 WL - 0.25 WL + 0.25 tCK Address and control input pulse width for each input tIPW TBD TBD 0.6 0.6 0.6 tCK NOTE: • AC specification is based on SAMSUNG components. Other DRAM manufactures specification may be different. Continued on next page |
类似零件编号 - WV3HG264M72EEU806D6SG |
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类似说明 - WV3HG264M72EEU806D6SG |
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