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WV3HG64M72AER-AD6 Datasheet(数据表) 5 Page - White Electronic Designs Corporation |
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WV3HG64M72AER-AD6 Datasheet(HTML) 5 Page - White Electronic Designs Corporation |
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5 page 
WV3HG64M72AER-AD6 March 2005 Rev. 1 ADVANCED 5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs DDR2 IDD SPECIFICATIONS AND CONDITIONS Includes DDR2 SDRAM components only Symbol Proposed Conditions 534 403 Units IDD0 Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING 2,420 2,250 mA IDD1 Operating one bank active-read-precharge current; IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address businputs are SWITCHING; Data pattern is same as IDAD6W 2,640 2,400 mA IDD2P Precharge power-down current; All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING 730 670 mA IDD2Q Precharge quiet standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputsare STABLE; Data bus inputs are FLOATING 1,110 1,040 mA IDD2N Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING 1,090 1,060 mA IDD3P Active power-down current; All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Fast PDN Exit MRS(12) = 0mA 1,190 1,130 mA Slow PDN Exit MRS(12) = 1mA 600 570 mA IDD3N Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING 1,840 1,730 mA IDAD6W Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING 3,550 2,810 mA IDAD6R Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDAD6W 3,230 2,730 mA IDD5B Burst auto refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS\ is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING 3,610 3,430 mA IDD6 Self refresh current; CK and CK\ at 0V; CKE 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING 740 680 mA IDD7 Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDAD6R; Refer to the following page for detailed timing conditions 5,540 5,210 mA |
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