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CM800E2C-66H 数据表(PDF) 4 Page - Mitsubishi Electric Semiconductor

部件名 CM800E2C-66H
功能描述  2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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制造商  MITSUBISHI [Mitsubishi Electric Semiconductor]
网页  http://www.mitsubishichips.com
标志 MITSUBISHI - Mitsubishi Electric Semiconductor

CM800E2C-66H 数据表(HTML) 4 Page - Mitsubishi Electric Semiconductor

  CM800E2C-66H Datasheet HTML 1Page - Mitsubishi Electric Semiconductor CM800E2C-66H Datasheet HTML 2Page - Mitsubishi Electric Semiconductor CM800E2C-66H Datasheet HTML 3Page - Mitsubishi Electric Semiconductor CM800E2C-66H Datasheet HTML 4Page - Mitsubishi Electric Semiconductor  
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Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800E2C-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
5
3
2
7102
100
7
23
5 7 103
23
5
5
5
3
2
101
5
7
5
3
2
7102
10–1
7
23
5 7 103
23
5
5
5
3
2
100
5
td(off)
VCC = 1650V, VGE =
±15V
RG = 2.5
Ω, Tj = 125°C
Inductive load
td(on)
tr
tf
VCC = 1650V, Tj = 125
°C
Inductive load
VGE =
±15V, RG = 2.5Ω
trr
Irr
7
5
3
2
102
7
5
5
3
2
103
20
16
12
8
4
0
8000
10000
6000
0
2000
4000
VCC = 1650V
IC = 800A
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE CHARGE QG (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TIME (s)
0
0.5
1.0
1.5
2.0
2.5
3.0
0
400
800
1200
1600
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
CURRENT (A)
Eon
Eoff
Erec
VCC = 1650V, VGE =
±15V,
RG = 2.5
Ω, Tj = 125°C,
Inductive load
10
8
6
4
2
0
010
20
30
GATE RESISTANCE (
Ω)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 1650V, IC = 800A,
VGE =
±15V, Tj = 125°C,
Inductive load
Eon
Eoff
10–2
7
5
3
2
10–1
7
5
3
2
100
101
7
5
3
2
10–3
10–2
10–1
100
101
23 5 7
2 3 5 7
23 5 7
23 5 7
Single Pulse
TC = 25
°C
Rth(j – c)Q = 0.013K/ W
Rth(j – c)R = 0.025K/ W


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