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CM800E2C-66H 数据表(PDF) 3 Page - Mitsubishi Electric Semiconductor

部件名 CM800E2C-66H
功能描述  2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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制造商  MITSUBISHI [Mitsubishi Electric Semiconductor]
网页  http://www.mitsubishichips.com
标志 MITSUBISHI - Mitsubishi Electric Semiconductor

CM800E2C-66H 数据表(HTML) 3 Page - Mitsubishi Electric Semiconductor

  CM800E2C-66H Datasheet HTML 1Page - Mitsubishi Electric Semiconductor CM800E2C-66H Datasheet HTML 2Page - Mitsubishi Electric Semiconductor CM800E2C-66H Datasheet HTML 3Page - Mitsubishi Electric Semiconductor CM800E2C-66H Datasheet HTML 4Page - Mitsubishi Electric Semiconductor  
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Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800E2C-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
800
400
0
10
0
246
1200
8
1600
0
8
6
4
2
0
400
800
1200
1600
VGE=15V
Tj = 25
°C
Tj = 125
°C
1600
800
400
0
1200
20
04
8
12
16
VCE=10V
Tj = 25
°C
Tj = 125
°C
020
16
12
8
4
10
8
6
4
2
0
Tj = 25
°C
IC = 1600A
IC = 800A
IC = 320A
Tj=25
°C
VGE=13V
VGE=12V
VGE=11V
VGE=10V
VGE=9V
VGE=8V
VGE=7V
VGE=14V
VGE=15V
VGE=20V
101
23
10–1
57 100 23 5 7 101 23 5 7 102
103
7
5
3
2
102
7
5
3
2
7
5
3
2
100
Cies
Coes
Cres
VGE = 0V, Tj = 25
°C
Cies, Coes : f = 100kHz
Cres
: f = 1MHz
CAPACITANCE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE VCE (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT IE (A)
0
1600
1200
800
400
8
6
4
2
0
Tj = 25
°C
Tj = 125
°C


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