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CM800E2C-66H 数据表(PDF) 2 Page - Mitsubishi Electric Semiconductor

部件名 CM800E2C-66H
功能描述  2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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制造商  MITSUBISHI [Mitsubishi Electric Semiconductor]
网页  http://www.mitsubishichips.com
标志 MITSUBISHI - Mitsubishi Electric Semiconductor

CM800E2C-66H 数据表(HTML) 2 Page - Mitsubishi Electric Semiconductor

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Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800E2C-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
MAXIMUM RATINGS (Tj = 25
°C)
VGE = 0V
VCE = 0V
DC, TC = 95
°C
Pulse
(Note 1)
Pulse
(Note 1)
TC = 25
°C, IGBT part
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
3300
±20
800
1600
800
1600
9600
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
Collector current
Emitter current
Symbol
Item
Conditions
Unit
Ratings
V
V
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25
°C
Tj = 125
°C
VCC = 1650V, IC = 800A, VGE = 15V
VCC = 1650V, IC = 800A
VGE1 = VGE2 = 15V
RG = 2.5
Resistive load switching operation
IE = 800A, VGE = 0V
IE = 800A
die / dt = –1600A /
µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied (Per 2/3 module)
IF = 800A, Clamp diode part
IF = 800A
dif / dt = –1600A /
µs, Clamp diode part
Junction to case, Clamp diode part
Case to fin, conductive grease applied (Per 1/3 module)
IC = 80mA, VCE = 10V
IC = 800A, VGE = 15V
(Note 4)
VCE = 10V
VGE = 0V
10
0.5
4.94
1.60
2.00
2.50
1.00
3.64
1.40
0.013
0.025
3.90
1.40
0.025
mA
µA
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
V
µs
µC
K/W
K/W
3.80
4.00
120
12.0
3.6
5.7
2.80
270
0.008
3.00
270
0.008
6.0
4.5
7.5
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Contact thermal resistance
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Min
Typ
Max
ICES
IGES
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC (Note 2)
trr
(Note 2)
Qrr (Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
VFM
trr
Qrr
Rth(j-c)
Rth(c-f)
ELECTRICAL CHARACTERISTICS (Tj = 25
°C)
Symbol
Item
Conditions
VGE(th)
VCE(sat)
Limits
Unit
Thermal resistance
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Tstg
Viso
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150
°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules


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