IKW75N60T datasheet(3/13 Pages) INFINEON | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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IKW75N60T 数据表(PDF) 3 Page - Infineon Technologies AG

部件名	IKW75N60T

功能描述	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Download	13 Pages

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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IKW75N60T 数据表(HTML) 3 Page - Infineon Technologies AG

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IKW75N60T

TrenchStop Series

q

Power Semiconductors

3

Rev. 2.4 May 06

Switching Characteristic, Inductive Load, at Tj=25 °C

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

td(on)

-

33

-

Rise time

tr

-

36

-

Turn-off delay time

td(off)

-

330

-

Fall time

tf

-

35

-

ns

Turn-on energy

Eon

-

2.0

-

Turn-off energy

Eoff

-

2.5

-

Total switching energy

Ets

Tj=25°C,

VCC=400V,IC=75A,

VGE=0/15V,

RG=5Ω,

Lσ

1) =100nH,

Cσ

1) =39pF

Energy losses include

“tail” and diode

reverse recovery.

-

4.5

-

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

-

121

-

ns

Diode reverse recovery charge

Qrr

-

2.4

-

µC

Diode peak reverse recovery current

Irrm

-

38.5

-

A

Diode peak rate of fall of reverse

recovery current during tb

dirr/dt

Tj=25°C,

VR=400V, IF=75A,

diF/dt=1460A/µs

-

921

-

A/

µs

Switching Characteristic, Inductive Load, at Tj=175 °C

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

td(on)

-

32

-

Rise time

tr

-

37

-

Turn-off delay time

td(off)

-

363

-

Fall time

tf

-

38

-

ns

Turn-on energy

Eon

-

2.9

-

Turn-off energy

Eoff

-

2.9

-

Total switching energy

Ets

Tj=175°C,

VCC=400V,IC=75A,

VGE=0/15V,

RG= 5Ω

Lσ

1) =100nH,

Cσ

1) =39pF

Energy losses include

“tail” and diode

reverse recovery.

-

5.8

-

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

-

182

-

ns

Diode reverse recovery charge

Qrr

-

5.8

-

µC

Diode peak reverse recovery current

Irrm

-

56.2

-

A

Diode peak rate of fall of reverse

recovery current during tb

dirr/dt

Tj=175°C

VR=400V, IF=75A,

diF/dt=1460A/µs

-

1013

-

A/

µs

1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

类似零件编号 - IKW75N60T

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IKW75N60T	411Kb / 13P	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology Rev. 2.6 Sep 08
	IKW75N60T	33Kb / 1P	Material Content Data Sheet 21. September 2015
	IKW75N60TA	1,003Kb / 13P	Designed for DC/AC converters for Automotive Application Rev. 2.3 14.07.2014
Inchange Semiconductor ...	IKW75N60TFK	330Kb / 3P	Trench gate Field-Stop IGBT
Infineon Technologies A...	IKW75N60T	411Kb / 13P	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology Rev. 2.6 Sep 08

类似说明 - IKW75N60T

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IHP10T120	334Kb / 14P	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Rev. 2 Jun-04
	IKP15N60T	402Kb / 13P	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Rev. 2.1 May 06
	IKP10N60T	396Kb / 14P	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Rev. 2 Oct-04
	IKW50N60T	416Kb / 13P	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Rev. 2.1 Dec-04
	IKP04N60T	365Kb / 13P	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Rev. 2.2 Dec-04
	IKP06N60T	359Kb / 13P	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Rev. 2.2 May 06
	IKW08T120	343Kb / 15P	LOW LOSS DUOPACK - IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI - PARALLEL EMCON HE DIODE Rev. 1 Oct-03
	IKW30N60T	397Kb / 13P	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Rev. 2.1 Dev-04
	IKA06N60T	354Kb / 14P	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Rev. 2 Oct-04
List of Unclassifed Man...	IKB06N60T	371Kb / 14P	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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