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GS816036BGT-200I 数据表(PDF) 11 Page - GSI Technology

部件名 GS816036BGT-200I
功能描述  1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
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制造商  GSI [GSI Technology]
网页  http://www.gsitechnology.com
标志 GSI - GSI Technology

GS816036BGT-200I 数据表(HTML) 11 Page - GSI Technology

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First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
WR
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
GS816018/32/36BT-250/200/150
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 9/2005
11/24
© 2004, GSI Technology
Simplified State Diagram with G


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