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GS82032AT-166I 数据表(PDF) 11 Page - GSI Technology

部件名 GS82032AT-166I
功能描述  64K x 32 2Mb Synchronous Burst SRAM
Download  22 Pages
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制造商  GSI [GSI Technology]
网页  http://www.gsitechnology.com
标志 GSI - GSI Technology

GS82032AT-166I 数据表(HTML) 11 Page - GSI Technology

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GS82032AT-180/166/150/133/100/66/4/5/6
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.12 10/2004
11/22
© 2000, GSI Technology
Note:
This parameter is sample tested.
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted.
3. Output Load 2 for tLZ, tHZ, tOLZ and tOHZ
4. Device is deselected as defined by the Truth Table.
Capacitance
(TA = 25°C, f = 1 MHZ, VDD = 3.3 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Control Input Capacitance
CI
VDD = 3.3 V
34
pF
Input Capacitance
CIN
VIN = 0 V
45
pF
Output Capacitance
COUT
VOUT = 0 V
67
pF
AC Test Conditions
Parameter
Conditions
Input high level
2.3 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
1.25 V
Output reference level
1.25 V
Output load
Fig. 1& 2
20% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD +- 2.0 V
50%
VDD
VIL
DQ
VT = 1.25 V
50
30pF*
DQ
2.5 V
Output Load 1
Output Load 2
225
225
5pF*
* Distributed Test Jig Capacitance


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