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GS78132AGB-10I 数据表(PDF) 3 Page - GSI Technology |
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GS78132AGB-10I 数据表(HTML) 3 Page - GSI Technology |
3 / 12 page Truth Table CE OE WE BA BB BC BD DQA1–A8 DQB1–B8 DQC1–C8 DQD1–D8 Supply Current H X X X X X X Not Selected Not Selected Not Selected Not Selected ISB1, ISB2 L L H L L L L Read Read Read Read IDD H L L L High Z Read Read Read L H L L Read High Z Read Read L L H L Read Read High Z Read L L L H Read Read Read High Z L X L L L L L Write Write Write Write H L L L High Z Write Write Write L H L L Write High Z Write Write L L H L Write Write High Z Write L L L H Write Write Write High L H H X X X X High Z High Z High Z High Z L X X H H H H High Z High Z High Z High Z GS78132AB Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Rev: 1.04 5/2006 3/12 © 2003, GSI Technology X: “H” or “L” Absolute Maximum Ratings Parameter Symbol Rating Unit Supply Voltage VDD –0.5 to +4.6 V Input Voltage VIN –0.5 to VDD +0.5 ( ≤ 4.6 V max.) V Output Voltage VOUT –0.5 to VDD +0.5 ( ≤ 4.6 V max.) V Allowable power dissipation PD 1.5 W Storage temperature TSTG –55 to 150 oC Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. |
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类似说明 - GS78132AGB-10I |
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